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林登松 教授
Lin,Dengsung

 

個人網站http://www.cc.nctu.edu.tw/~dslin

研究室電話： (物理館室)
實驗室：表面科學實驗室
實驗室電話： (物理館  室)
傳真：03-5723052
E-mail：dengsunglin at google.com

 

學歷
  • 美國伊利諾大學香檳校區物理系博士 (1994)
  • 國立台灣大學物理系學士 (1985)

現職與經歷

現職：

  • 國立清華大學物理系教授 (2008/08- )

經歷：

  • 國立交通大學物理研究所教授 (2000/08- )
  • 美國勞倫斯-柏克萊實驗室訪問科學家 (2007)
  • 美國康乃爾大學物理系訪問科學家 (1999)

 

 

 

研究領域

1.                               凝態物理實驗與計算模擬

2.                               表面、薄膜、磊晶的物理與化學

3.                               同步輻射光電子譜技術與科學

4.                               原子解析度掃瞄探針顯微鏡技術與科學

研究興趣與成果

我們的研究工作領域一般稱為”表面科學”，也就是包含物理、化學、材料的跨領域科學研究。我們實驗以基礎物理課題為研究主軸，但是實驗室須廣泛應用到當代的物理化學、材料科學的知識與研究技術。在適當時機下，我們也會從事一些較應用物理導向的研究。

 

我們實驗室中主要研究計畫經常是以超高真空環境為背景、以完美的半導體晶體表面為舞台，以同步輻射光源為探照燈、以掃瞄探針顯微鏡為攝影機，以各種原子、分子、薄膜為演員，來瞭解、研究大自然寫的劇本如何演出。

  

因為同時應用強有力又互補的高解析度光電子能譜技術與清楚解析出單一原子的顯微技術，我們研究過的問題，比如原子力顯微鏡如何受到樣品局部功函數影響，氫分子如何由受熱表面脫附、”染色技術”概念如何可以用於掃瞄探針顯微術、第四族半導體分子束磊晶的原子軌跡、等大都能得到很好的瞭解或解答。

 

經由合作研究開始，我們實驗室也開始利用最新電腦叢集的高速能力，運用量子力學為基礎的材料計算與模擬軟體，來分析與瞭解我們的實驗結果。能譜技術、顯微技術、與材料計算將是我們研究的三個支腳。

 

代表著作

1.      [2007] Ming-Feng Hsieh, Jen-Yang Chung, Deng-Sung Lin*, and Shiow-Fon Tsay, Correlation of Reaction Sites during the Chlorine Extraction by Hydrogen atoms from Cl/Si(100)-2x1, J. Chem. Phys. 127, 034708 

2.      [2006] K.-M. Yang, J. Y. Chung, M. F. Hsieh, S.-S. Ferng, D.-S. Lin*, and T.C. Chiang, Systematic Variations in Apparent Topographic Height as Measured by Non-contact Atomic Force Microscopy, Phys. Rev. B 74, 193313

3.      [2006] Shyh-Shin Ferng, Tsung-Hsi Yang, Guangli Luo, Kai-Ming Yang, Ming-Feng Hsieh and Deng-Sung Lin: Growth behaviour of Ge nano-islands on the nanosized Si{111} facets bordering on two {100} planes. Nanotechnology 17, 5207, front cover page featured article.

4.      [2005] S.-S. Ferng, C.-T. Lin, K.-M. Yang, D.-S. Lin* and T.C. Chiang, Atomistic View of the Recombinative Desorption of H2 from H/Si(100), Phys. Rev. Lett. 94, 196103

5.      [2003] D.-S. Lin*, J. L. Wu, S.-Y. Pan, and T.-C. Chiang, Atomistics of Ge deposition on Si(100) by atomic layer epitaxy, Phys. Rev. Lett. 90, 046102

6.      [2000] Deng-Sung Lin, Tsai-Shain Ku, and Ru-Ping Chen, Interaction of phosphine with Si(100) from core-level photoemission and real-time scanning-tunneling-microscopy,　 Phys. Rev. B 61, 2799-2805

 

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o                                            全部著作 (Click 展開/隱藏)

A. Refereed Papers:

  • K. -M. Yang, J. Y. Chung, and D.-S. Lin*, In situ Error Estimation for Topographic Height Measured from Frequency-Modulated Atomic Force Microscopy, Jpn. J. Appl. Phys. Vol.46, pp. 4395-4402(2007).
  • Ming-Feng Hsieh, Jen-Yang Chung, Deng-Sung Lin*, and Shiow-Fon Tsay, Correlation of Reaction Sites during the Chlorine Extraction by Hydrogen atoms from Cl/Si(100)-2x1, J. Chem. Phys. 127, 034708 (2007).
  • K.-M. Yang, J. Y. Chung, M. F. Hsieh, S.-S. Ferng, D.-S. Lin*, and T.C. Chiang, Systematic Variations in Apparent Topographic Height as Measured by Non-contact Atomic Force Microscopy, Phys. Rev. B 74, 193313 (2006)
  • Shyh-Shin Ferng, Tsung-Hsi Yang, Guangli Luo, Kai-Ming Yang, Ming-Feng Hsieh and Deng-Sung Lin: Growth behaviour of Ge nano-islands on the nanosized Si{111} facets bordering on two {100} planes. Nanotechnology 17, 5207 ( 2006), front cover page featured article.
  •  D.-S. Lin* and T.C. Chiang,: Lin and Chiang reply. Phys. Rev. Lett. 96, 209602 ( 2006).
  • PDF S.-S. Ferng, C.-T. Lin, K.-M. Yang, M.-F. Hsieh, and D.-S. Lin*: Evolution of the Two-Dimensional Structure Phase Transitions (3´1)→(2´1) and (1´1)→(2´1) on the Hydrogen Terminated Si(100) Surface, Jpn. J. Appl. Phys. 45, 2197 (2006).  
  • PDF S.-S. Ferng, C.-T. Lin, K.-M. Yang, D.-S. Lin* and T.C. Chiang, Atomistic View of the Recombinative Desorption of H2 from H/Si(100), Phys. Rev. Lett. 94, 196103 (2005).
  • PDF,J. L. Wu, Shiang-Yuang Pan, and Deng-Sung Lin*, “Stability and mechanism of selective etching of ultrathin Ge films on the Si(100) surface upon chlorine adsorption” Phys. Rev. B 69, 045308 (2004).
  • PDF D.-S. Lin*, J. L. Wu, S.-Y. Pan, and T.-C. Chiang, Atomistics of Ge deposition on Si(100) by atomic layer epitaxy, Phys. Rev. Lett. 90, 046102 (2003).
  • PDF M.-W. Wu, S.-Y. Pan, W.-H. Hung, and D.-S. Lin*, Thermal reactions on the Cl-terminated SiGe(100), Surf. Sci. 507, 295 (2002).
  • PDF   Deng-Sung Lin*, Meng-Wen Wu,  and Shiang-Yuan Pan, Chlorine Induced Si Surface Segregation on the Ge-terminated Si/Ge(100) Surface from Core-level Photoemission, Phys. Rev. B.  64, 233302 (2001).
  • PDF H.-W. Tsai and D.-S. Lin*, Comparison of thermal reactions of phosphine on Ge(100) and Si (100) by high-resolution core-level photoemission, Surf. Sci. 482-485, 654-658 (2001).
  • Y.-C. Pan, S. F. Wang, W.-H. Lee, W.C. Lin, C.-I. Chiang, H. Chang, H.H Hsieh, J.M. Chen, D.-S. Lin, M.-C. Lee, W.-K. Chen, and W.-H. Chen, Structural study of GN:Mg films by x-ray absorption near-edge structure spectroscopy, SOLID STATE COMMUN 117: (10) 577-582 ( 2001).
  • Y.-C. Pan, S. F. Wang, W.-H. Lee, M.-C. Lee, W.-K. Chen, W.-H. Chen, L.-Y. Jang, J.F. Lee, C.-I. Chiang, H. Chang, K.-T. Wu, and, D.-S. Lin, Gallium K-edge x-ray absorption study of Mg-doped GaN, APPL PHYS LETT 78: (1) 31-33 JAN 1( 2001).
  • PDF Ru-Ping Chen and Deng-Sung Lin, Distribution of dangling bond pairs on partially hydrogen-terminated Si(100) surface observed by scanning-tunneling-microscopy, Surf. Sci. 454, 196-200 (2000).
  • PDF Deng-Sung Lin, Tsai-Shain Ku, and Ru-Ping Chen, Interaction of phosphine with Si(100) from core-level photoemission and real-time scanning-tunneling-microscopy,　 Phys. Rev. B 61, 2799-2805 (2000).
  • PDF Deng-Sung Lin and Ru-Ping Chen, Hydrogen desorption kinetic measurement on the Si(100)-2x1:H surface by directly counting desorption sites, Phys. Rev. B60, R8461-8464 (1999).
  • PDF Deng-Sung Lin, Tsai-Shain Ku, and Tzeng-Jiuh Sheu, Thermal reactions of phosphine with Si(100): A combined photoemission and scanning-tunneling-microscopy study, Surf. Sci., 424, 7(1999).
  • Y.-C. Pan, W.-H. Lee, C.-K. Shu, H.-C. Lin, C.-I. Chiang, H. Chang, D.-S. Lin, M.-C. Lee, and W.-K. Chen, Influence of sapphire nitridation on properties of Indium Nitride Prepared by metalorganic vapor phase epitaxy, Jpn. J. Appl. Phys. 38, 4016 (1999).
  • PDF Perng-Hung Wu and Deng-Sung Lin, Growth mode in Si(100)-(2x1) epitaxy by low-temperature chemical vapor deposition, Phys. Rev. B15, 57, 12421-12427 (1998).
  • D.-S. Lin, Scanning tunneling microscopy observation of surface reconstruction of Si(100) during chemical vapor deposition from Si2H6, Surf. Sci., 402, 831-835 (1998).
  • D.-S. Lin and P.-H. Wu, Real-time scanning tunneling microscopy observation of structural phase transition Si(100)-(2x1)→(2xn)→c(4x4), Surf. Sci. Lett. 397, 273 (1998).
  • K.-S. Huang, T.-S. Ku, and D.-S. Lin, Growth process of Ge on Si(100)-(2x1) in atomic-layer epitaxy from Ge2H6, Phys. Rev. B56, 4878 (1997).
  • D.-S. Lin, T. Miller, and T.-C. Chiang, Atomic-level investigation of the growth of Si/Ge by UHV-CVD, J. Vac. Sci. Technol. A15, 919-926 (1997).
  • D.-S. Lin, K.-H. Huang, D.-W. Pi, and R.-T. Wu, Coverage-dependent thermal reactions of digermane on Si(100)-(2x1), Phys. Rev. B54, 16958-16964 (1996).
  • Hawoong Hong, R. D. Aburano, K.-S. Chung, D.-S. Lin, E. S. Hirschorn, T.-C. Chiang, and Haydn Chen, X-Ray Truncation rod study of Ge(100) surface roughening by molecular beam homoepitaxial growth, J. Appl. Phys. 79, 6858-6864 (1996).
  • R. D. Aburano, Hawoong Hong, J.M. Roesler, K. Chung, D.-S. Lin, P. Zschack, Haydn Chen, and T.-C. Chiang, X-ray study of the Ag/Si(111) interface, Surf. Sci. Lett. 339, L891-896 (1995).
  • R. D. Aburano, Hawoong Hong, J.M. Roesler, K. Chung, D.-S. Lin, P. Zschack, Haydn Chen, and T.-C. Chiang, Boundary structure determination of Ag/Si(111) interface by X-ray diffraction, Phys. Rev. B52, 1839-1847 (1995).
  • E. S. Hirschorn, D.-S. Lin, E. D. Hanson, and T.-C. Chiang, Atomic burrowing and hole formation for Au growth on Ag(110), Surf. Sci. Lett. 323, L299-305 (1995).
  • M. Sieger, J. Roesler, D.-S. Lin, T. Miller, and T.-C. Chiang, Holography of Ge(111)-c(2x8) by surface core-level photoemission, Phys. Rev. Lett. 73, 3117-3120 (1994).
  • D.-S. Lin, Hawoong Hong,T. Miller and T.-C. Chiang, Growth and atomic structure of epitaxial Si films on Ge(111), Surf. Sci. 312, 213-220 (1994).
  • R. Tsu, H. Z. Xiao, Y. W. Kim, M.-A. Hasan, H. K. Birnbaum, J. E. Greene, D.-S. Lin, and T.-C. Chiang, Surface segregation and growth-mode transitions during the initial stages of Si growth on Ge(100)-(2x1) by cyclic GSMBE from Si2H6, J. Appl. Phys. 75, 240-247 (1994).
  • D.-S. Lin, E. S. Hirschorn, T. Miller, and T.-C. Chiang, Adsorption, thermal reaction, and desorption of disilane on Ge(111)-c(2x8), Phys. Rev. B49, 1836-1843 (1994).
  • D.-S. Lin, T. Miller, T.-C. Chiang, R. Tsu, and J. E. Greene, Thermal reactions of disilane on Si(100) studied by synchrotron-radiation photoemission, Phys. Rev. B48, 11846-11850 (1993).
  • D.-S. Lin, T. Miller, and T.-C. Chiang, Adsorption and thermal reactions of disilane and the growth of Si films on Ge(100)-(2x1), Phys. Rev. B47, 6543-6554 (1993).
  • R. Tsu, D. Lubben, T. R. Bramblett, J. E. Greene, D.-S. Lin and T.-C. Chiang, Adsorption and dissociation of Si2H6 on Ge(100)-(2x1), Surf. Sci. 280, 265-276 (1993).
  • D.-S. Lin, J. A. Carlisle, T. Miller, and T.-C. Chiang, Lin et al. reply, Phys. Rev. Lett. 69, 552 (1992).
  • D.-S. Lin, T. Miller, and T.-C. Chiang, Si indiffusion on Ge(100)-(2x1) studied by core-level photoemission, Phys. Rev. B45, 11415-11418 (1992).
  • D.-S. Lin, E. S. Hirschorn, T.-C. Chiang, R. Tsu, D. Lubben, and J. E. Greene, Scanning-tunneling-microscopy studies of disilane and pyroltyic growth on Si(100)-(2x1), Phys. Rev. B45, 3494-3498 (1992).
  • Hawoong Hong, R. D. Aburano, D.-S. Lin, Haydn Chen, and T.-C. Chiang, X-Ray scattering study of Ag/Si(111) buried interface sturctures, Phys. Rev. Lett. 68, 507-510 (1992).
  • Hawoong Hong, W. E. McMahon, D.-S. Lin, R. D. Aburano, Haydn Chen, T.-C. Chiang, and P. Zschack, C60 encapsulation of the Si(111)-(7x7) surface, Appl. Phys. Lett. 61, 3127-3130 (1992).
  • D.-S. Lin, T. Miller, and T.-C. Chiang, Bonding of Cs on Si and Ge surfaces studied by core-level spectroscopy, Phys. Rev. B44, 10719-10723 (1991).
  • D.-S. Lin T. Miller, and T.-C. Chiang, Dimer charge asymmetry determined by photoemission from epitaxial Ge on Si(100)-(2x1), Phys. Rev. Lett. 67, 2187-2190 (1991).
  • E. S. Hirschorn, D.-S. Lin, F. M. Leibsle, A. Samsavar, and T.-C. Chiang, Charge transfer and asymmetry on Ge(111)-c(2x8) studied by scanning tunneling microscopy, Phys. Rev. B44, 1403 (1991).
  • C. C. Huang, T. Min, D.-S. Lin, B. Zhou, , and J. W. Goodby, Electro-optical and thermal studies of one ferroelectric liquid-crystal compound with a polarization sign reversal, J. Phys. France 51, 1749 (1990).
  • C. C. Huang, D.-S. Lin, J. W. Goodby, M. A. Waugh, S. M. Stein, and E. Chin, Calorimetric and optical microscopic studies on one ferroelectric liquid-crystal compound with the smectic-A phase, Phys. Rev. A 40, 4153 (1989).

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