林登松教授
Lin,Dengsung

個人網站 http://www.phys.nthu.edu.tw/~surface/index.htm

研究室電話：5742977
實驗室：表面、介面與薄膜實驗室
實驗室電話：33251
傳真：03-5723052
E-mail：dengsunglin at google.com

	學歷
美國伊利諾大學香檳校區物理系博士 (1994) 國立台灣大學物理系學士 (1985)
	現職與經歷
現職：國立清華大學物理系教授 (2008/08- ) 經歷：國立交通大學物理研究所教授 (2000/08-2008/07 ) 美國勞倫斯-柏克萊實驗室訪問科學家 (2007) 美國康乃爾大學物理系訪問科學家 (1999)
	研究領域
凝態物理實驗與計算模擬表面、薄膜、磊晶的物理與化學同步輻射光電子譜技術與科學原子解析度掃瞄探針顯微鏡技術與科學
	研究興趣與成果

我們的研究領域一般常簡稱為”表面科學”，其實是廣泛包含凝體的表面、介面與薄膜的原子結構、電子結構、物理與化學特性、現象與各種樣品處理、薄膜成長技術等的相關研究。我們的工作以研究基礎物理課題為主軸，但須綜合應用當代物理、化學、材料的跨領域知識，研究成果也回饋給這些領域做為基礎知識或技術發展參考資訊。我們實驗室中主要研究計畫經常是以超高真空環境為背景、以完美的半導體晶體表面為舞台，以同步輻射光源為探照燈、以掃瞄探針顯微鏡為攝影機，以各種原子、分子、薄膜為演員，來瞭解、研究大自然寫的劇本如何演出，或者嘗試要自然依我們自己編寫劇本演出。因為同時應用強有力又互補的高解析度光電子能譜技術與清楚解析出單一原子的顯微技術，對研究過的問題，比如原子力顯微鏡如何受到樣品局部功函數影響，氫分子如何由受熱表面脫附、”染色技術”概念如何可以用於掃瞄探針顯微術、第四族半導體分子束磊晶的原子軌跡、離子固體薄膜成長技術於其特性等，我們大都能得到很好的瞭解或解答。我們實驗室也利用最新電腦叢集的高速能力，運用量子力學為基礎的材料計算與模擬軟體，來分析與瞭解我們的實驗結果。能譜技術、顯微技術、與材料計算與模擬是我們研究的三個支腳。
	代表著作
Possibility of direct exchange diffusion of hydrogen on the Cl/Si(100)-2´1 surface, Physical Review B 80, 045304 (2009). 原子直接交換式擴散現象是很多凝態物理、薄膜物理、表面物理等教科書中的會談到的標準擴散模型，但也常會提到種擴散現象因其高能量過程而只在高溫發生。我們以顯微鏡影片顯影與測量(極可能的)的原子直接交換式擴散現象，我們也融合理論模擬，說明其發生的可能中間態過程與原因。 C.-T. Lou, H.-D. Li, J.-Y. Chung, D.-S. Lin, T.C. Chiang, Oscillations of Bond Character and Polarization at the NaCl/Ge(100) Interface during Cyclic Growth, Physical Review B (Condensed Matter and Materials Physics) 80, 195311 (2009). 發生於奈米薄膜表面上的物理化學反應，竟會穿越數個原子層厚薄膜而引起薄膜與基板間介面的電子組態構造強烈變化?我們以同步輻射光電子譜說明這在離子固體薄膜上是常會發生的。 Mediation of Chain Reactions by Propagating Radicals during Halogenation of H-Masked Si(100): Implications for Atomic-Scale Lithography and Processing, J. Chem. Phys. 130, 1 (2009). 我們(應是首次)以實空間原子影像觀測與證實一個活性原子可以在表面上引起連鎖反應，我們也定量得出活性原子擴散方位、距離與其引發連鎖反應的次數。 . Correlation of Reaction Sites during the Chlorine Extraction by Hydrogen atoms from Cl/Si(100)-2x1, J. Chem. Phys. 127, 034708 (2007). 氣體分子撞擊晶體表面而產生化學反應時，其反應當然是在該撞擊點發生嗎?我們以實空間原子影像、同步輻射光電子譜、蒙地卡羅模擬計算等綜合研究，證明這種直覺性的想法不是全然正確的，反應是在該撞擊點周邊不遠的區域內發生。 Atomistic View of the Recombinative Desorption of H2 from H/Si(100), Phys. Rev. Lett. 94, 196103 (2005). 我們以高解析度實空間原子影像直接觀測一個重要的化學物理現象: 氫重組合分子熱脫附反應與其發生的兩段式表面原子排列重組過程機制。
全部著作 (Click 展開/隱藏) 1.K. -M. Yang, J. Y. Chung, and D.-S. Lin, In situ* Error Estimation for Topographic Height Measured from Frequency-Modulated Atomic Force Microscopy, Jpn. J. Appl. Phys. Vol.46, pp. 4395-4402(2007). 2.Ming-Feng Hsieh, Jen-Yang Chung, Deng-Sung Lin, and Shiow-Fon Tsay, Correlation of Reaction Sites during the Chlorine Extraction by Hydrogen atoms from Cl/Si(100)-2x1, J. Chem. Phys. 127, 034708 (2007). 3.K.-M. Yang, J. Y. Chung, M. F. Hsieh, S.-S. Ferng, D.-S. Lin, and T.C. Chiang, Systematic Variations in Apparent Topographic Height as Measured by Non-contact Atomic Force Microscopy, Phys. Rev. B 74, 193313 (2006) 4.Shyh-Shin Ferng, Tsung-Hsi Yang, Guangli Luo, Kai-Ming Yang, Ming-Feng Hsieh and Deng-Sung Lin: Growth behaviour of Ge nano-islands on the nanosized Si{111} facets bordering on two {100} planes. Nanotechnology 17, 5207 ( 2006), front cover page featured article. 5. D.-S. Lin* and T.C. Chiang,: Lin and Chiang reply. Phys. Rev. Lett. 96, 209602 ( 2006). 6.PDF S.-S. Ferng, C.-T. Lin, K.-M. Yang, M.-F. Hsieh, and D.-S. Lin: Evolution of the Two-Dimensional Structure Phase Transitions (3´1)→(2´1) and (1´1)→(2´1) on the Hydrogen Terminated Si(100) Surface, Jpn. J. Appl. Phys. 45, 2197 (2006). 7.PDF S.-S. Ferng, C.-T. Lin, K.-M. Yang, D.-S. Lin and T.C. Chiang, Atomistic View of the Recombinative Desorption of H2 from H/Si(100), Phys. Rev. Lett. 94, 196103 (2005). 8.PDF,J. L. Wu, Shiang-Yuang Pan, and Deng-Sung Lin, “Stability and mechanism of selective etching of ultrathin Ge films on the Si(100) surface upon chlorine adsorption” Phys. Rev. B 69, 045308 (2004). 9.PDF D.-S. Lin, J. L. Wu, S.-Y. Pan, and T.-C. Chiang, Atomistics of Ge deposition on Si(100) by atomic layer epitaxy, Phys. Rev. Lett. 90, 046102 (2003). 10.PDF M.-W. Wu, S.-Y. Pan, W.-H. Hung, and D.-S. Lin, Thermal reactions on the Cl-terminated SiGe(100), Surf. Sci. 507, 295 (2002). 11.PDF Deng-Sung Lin, Meng-Wen Wu, and Shiang-Yuan Pan, Chlorine Induced Si Surface Segregation on the Ge-terminated Si/Ge(100) Surface from Core-level Photoemission, Phys. Rev. B. 64, 233302 (2001). 12.PDF H.-W. Tsai and D.-S. Lin*, Comparison of thermal reactions of phosphine on Ge(100) and Si (100) by high-resolution core-level photoemission, Surf. Sci. 482-485, 654-658 (2001). 13.Y.-C. Pan, S. F. Wang, W.-H. Lee, W.C. Lin, C.-I. Chiang, H. Chang, H.H Hsieh, J.M. Chen, D.-S. Lin, M.-C. Lee, W.-K. Chen, and W.-H. Chen, Structural study of GN:Mg films by x-ray absorption near-edge structure spectroscopy, SOLID STATE COMMUN 117: (10) 577-582 ( 2001). 14.Y.-C. Pan, S. F. Wang, W.-H. Lee, M.-C. Lee, W.-K. Chen, W.-H. Chen, L.-Y. Jang, J.F. Lee, C.-I. Chiang, H. Chang, K.-T. Wu, and, D.-S. Lin, Gallium K-edge x-ray absorption study of Mg-doped GaN, APPL PHYS LETT 78: (1) 31-33 JAN 1( 2001). 15.PDF Ru-Ping Chen and Deng-Sung Lin, Distribution of dangling bond pairs on partially hydrogen-terminated Si(100) surface observed by scanning-tunneling-microscopy, Surf. Sci. 454, 196-200 (2000). 16.PDF Deng-Sung Lin, Tsai-Shain Ku, and Ru-Ping Chen, Interaction of phosphine with Si(100) from core-level photoemission and real-time scanning-tunneling-microscopy,　 Phys. Rev. B 61, 2799-2805 (2000). 17.PDF Deng-Sung Lin and Ru-Ping Chen, Hydrogen desorption kinetic measurement on the Si(100)-2x1:H surface by directly counting desorption sites, Phys. Rev. B60, R8461-8464 (1999). 18.PDF Deng-Sung Lin, Tsai-Shain Ku, and Tzeng-Jiuh Sheu, Thermal reactions of phosphine with Si(100): A combined photoemission and scanning-tunneling-microscopy study, Surf. Sci., 424, 7(1999). 19.Y.-C. Pan, W.-H. Lee, C.-K. Shu, H.-C. Lin, C.-I. Chiang, H. Chang, D.-S. Lin, M.-C. Lee, and W.-K. Chen, Influence of sapphire nitridation on properties of Indium Nitride Prepared by metalorganic vapor phase epitaxy, Jpn. J. Appl. Phys. 38, 4016 (1999). 20.PDF Perng-Hung Wu and Deng-Sung Lin, Growth mode in Si(100)-(2x1) epitaxy by low-temperature chemical vapor deposition, Phys. Rev. B15, 57, 12421-12427 (1998). 21.D.-S. Lin, Scanning tunneling microscopy observation of surface reconstruction of Si(100) during chemical vapor deposition from Si₂H₆, Surf. Sci., 402, 831-835 (1998). 22.D.-S. Lin and P.-H. Wu, Real-time scanning tunneling microscopy observation of structural phase transition Si(100)-(2x1)→(2xn)→c(4x4), Surf. Sci. Lett. 397, 273 (1998). 23.K.-S. Huang, T.-S. Ku, and D.-S. Lin, Growth process of Ge on Si(100)-(2x1) in atomic-layer epitaxy from Ge₂H₆, Phys. Rev. B56, 4878 (1997). 24.D.-S. Lin, T. Miller, and T.-C. Chiang, Atomic-level investigation of the growth of Si/Ge by UHV-CVD, J. Vac. Sci. Technol. A15, 919-926 (1997). 25.D.-S. Lin, K.-H. Huang, D.-W. Pi, and R.-T. Wu, Coverage-dependent thermal reactions of digermane on Si(100)-(2x1), Phys. Rev. B54, 16958-16964 (1996). 26.Hawoong Hong, R. D. Aburano, K.-S. Chung, D.-S. Lin, E. S. Hirschorn, T.-C. Chiang, and Haydn Chen, X-Ray Truncation rod study of Ge(100) surface roughening by molecular beam homoepitaxial growth, J. Appl. Phys. 79, 6858-6864 (1996). 27.R. D. Aburano, Hawoong Hong, J.M. Roesler, K. Chung, D.-S. Lin, P. Zschack, Haydn Chen, and T.-C. Chiang, X-ray study of the Ag/Si(111) interface, Surf. Sci. Lett. 339, L891-896 (1995). 28.R. D. Aburano, Hawoong Hong, J.M. Roesler, K. Chung, D.-S. Lin, P. Zschack, Haydn Chen, and T.-C. Chiang, Boundary structure determination of Ag/Si(111) interface by X-ray diffraction, Phys. Rev. B52, 1839-1847 (1995). 29.E. S. Hirschorn, D.-S. Lin, E. D. Hanson, and T.-C. Chiang, Atomic burrowing and hole formation for Au growth on Ag(110), Surf. Sci. Lett. 323, L299-305 (1995). 30.M. Sieger, J. Roesler, D.-S. Lin, T. Miller, and T.-C. Chiang, Holography of Ge(111)-c(2x8) by surface core-level photoemission, Phys. Rev. Lett. 73, 3117-3120 (1994). 31.D.-S. Lin, Hawoong Hong,T. Miller and T.-C. Chiang, Growth and atomic structure of epitaxial Si films on Ge(111), Surf. Sci. 312, 213-220 (1994). 32.R. Tsu, H. Z. Xiao, Y. W. Kim, M.-A. Hasan, H. K. Birnbaum, J. E. Greene, D.-S. Lin, and T.-C. Chiang, Surface segregation and growth-mode transitions during the initial stages of Si growth on Ge(100)-(2x1) by cyclic GSMBE from Si₂H₆, J. Appl. Phys. 75, 240-247 (1994). 33.D.-S. Lin, E. S. Hirschorn, T. Miller, and T.-C. Chiang, Adsorption, thermal reaction, and desorption of disilane on Ge(111)-c(2x8), Phys. Rev. B49, 1836-1843 (1994). 34.D.-S. Lin, T. Miller, T.-C. Chiang, R. Tsu, and J. E. Greene, Thermal reactions of disilane on Si(100) studied by synchrotron-radiation photoemission, Phys. Rev. B48, 11846-11850 (1993). 35.D.-S. Lin, T. Miller, and T.-C. Chiang, Adsorption and thermal reactions of disilane and the growth of Si films on Ge(100)-(2x1), Phys. Rev. B47, 6543-6554 (1993). 36.R. Tsu, D. Lubben, T. R. Bramblett, J. E. Greene, D.-S. Lin and T.-C. Chiang, Adsorption and dissociation of Si₂H₆ on Ge(100)-(2x1), Surf. Sci. 280, 265-276 (1993). 37.D.-S. Lin, J. A. Carlisle, T. Miller, and T.-C. Chiang, Lin et al. reply, Phys. Rev. Lett. 69, 552 (1992). 38.D.-S. Lin, T. Miller, and T.-C. Chiang, Si indiffusion on Ge(100)-(2x1) studied by core-level photoemission, Phys. Rev. B45, 11415-11418 (1992). 39.D.-S. Lin, E. S. Hirschorn, T.-C. Chiang, R. Tsu, D. Lubben, and J. E. Greene, Scanning-tunneling-microscopy studies of disilane and pyroltyic growth on Si(100)-(2x1), Phys. Rev. B45, 3494-3498 (1992). 40.Hawoong Hong, R. D. Aburano, D.-S. Lin, Haydn Chen, and T.-C. Chiang, X-Ray scattering study of Ag/Si(111) buried interface sturctures, Phys. Rev. Lett. 68, 507-510 (1992). 41.Hawoong Hong, W. E. McMahon, D.-S. Lin, R. D. Aburano, Haydn Chen, T.-C. Chiang, and P. Zschack, C₆₀ encapsulation of the Si(111)-(7x7) surface, Appl. Phys. Lett. 61, 3127-3130 (1992). 42.D.-S. Lin, T. Miller, and T.-C. Chiang, Bonding of Cs on Si and Ge surfaces studied by core-level spectroscopy, Phys. Rev. B44, 10719-10723 (1991). 43.D.-S. Lin T. Miller, and T.-C. Chiang, Dimer charge asymmetry determined by photoemission from epitaxial Ge on Si(100)-(2x1), Phys. Rev. Lett. 67, 2187-2190 (1991). 44.E. S. Hirschorn, D.-S. Lin, F. M. Leibsle, A. Samsavar, and T.-C. Chiang, Charge transfer and asymmetry on Ge(111)-c(2x8) studied by scanning tunneling microscopy, Phys. Rev. B44, 1403 (1991). 45.C. C. Huang, T. Min, D.-S. Lin, B. Zhou, , and J. W. Goodby, Electro-optical and thermal studies of one ferroelectric liquid-crystal compound with a polarization sign reversal, J. Phys. France 51, 1749 (1990). 46.C. C. Huang, D.-S. Lin, J. W. Goodby, M. A. Waugh, S. M. Stein, and E. Chin, Calorimetric and optical microscopic studies on one ferroelectric liquid-crystal compound with the smectic-A phase, Phys. Rev. A 40, 4153 (1989). 　 Top│Back