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Education |
- 1977-1981, Ph.D. Applied Physics, Stanford University, U.S.A.
- 1975-1977, M.S. Applied Physics, Stanford University, U.S.A.
- 1971-1975, B.S. Physics, National Taiwan University, R.O.C.
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Professional Experience |
Current
position：
- 1/2008-1/2010 President, the Physical Society of Republic of China
- 8/2008-present Director, Fundamental Science Research Center, National Tsing Hua University
- 8/2008-present Tsing Hua Distinguished Chair professor
- 6/ 2003-present, Professor , Department of Physics, National Tsing Hua University
Experience：
- 8/2005- 7/2008 , Chairperson, Department of Physics, National Tsing Hua University
- 8/2004-7/2008 Tsing Hua Natural Science Chair Professor, National Tsing Hua University
- 6/2003-7/2004 TSMC Endowed Chair Professor, National Tsing Hua University
- 6/2003-7/2005, Senior Advisor of Industrial Technology Research Institute (ITRI)
- 8/2000-6/2003, Distinguished Member of Technical Staff, Electronic Research Laboratory, Agere Systems, New Jersey, U.S.A.
- 6/1981-8/2000, Member of Technical Staff, Physical Research Division, Bell Laboratories, Murray Hill, U.S.A.
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Honors and
Awards |
- 2009-present, Fellow, American Physical Society
- 2005- present The Physical Society of Republic of China Fellow
- 2/2004-2/2009 Outstanding Scholar Award from the Foundation for the Advancement of Outstanding Scholarship, Taiwan
- 6/2003-7/2004 TSMC Endowed Chair award
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Research Fields |
- Materials physics of thin films by advanced molecular beam epitaxy
- Spintronics
- Gate dielectrics for Si and III-V semiconductors
- High temperature superconducting films
- Magnetic superlattices and heterostructures
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Research Interests and achievement |
Updated
on September 3, 2006
My research has
primarily been exploring the frontier of physics in novel
materials by advanced thin film preparation techniques.
During my tenure in Bell Lab Physical Research over a
span of 22 years, the earlier representative work was
magnetic superlattices by the invention of metal molecular
beam epitaxy in 1981-86. The pioneer work on synthetic
rare earth magnetic superlattices demonstrated for the
first time the modulation effect of magnetic properties
by artificial layering, and invented the notion of "magnetronics”.
During 1987-92, high temperature superconducting perovskite
oxide films was the main focus by inventing oxide molecular
beam epitaxy, and this has led to studies of anisotropic
superconducting properties in layered cooperates, and
understanding of the fundamental HTSC mechanism. From
1993 till now, my interest has shifted toward high dielectric
constant (κ) oxides for nano electronic and photonic
applications. Two new transparent conducting oxides were
discovered for modern display and electro-optical devices.
During last decade major efforts were devoted to high
κ dieletric film synthesis for DRAMs, wireless communication,
and recently gate oxide applications. The discovery of
a mixed oxide for compond semiconductors passivation
demonstrated for the first time the long sought GaAs-based
MOSFETs, now considered as a viable technology replacing
Si CMOS in near future. Another new program being developed
is the spintronics research to study dilutely doped magnetic
oxides based on high κ dielectrics, spin polarization
anaylsis by Andreev Reflection, and spin injection and
dynamics in Datta-Das Spin FET made of half metals and
compound semiconductors
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Selected
Publications |
- [2009] "InGaAs Metal-Oxide-Semiconductor Devices with High k Dielectrics for Science and Technology beyond Si CMOS”, M. Hong*, J. Kwo* , T. D. Lin, and M. L. Huang, MRS Bulletin, 34 , 514, (2009).
- [2005] "High κ Gate Dielectrics for Compound Semiconductors,
by J. Kwo and M. Hong , a book chapter in "Advanced
Gate Stacks on High-Mobility Semiconductors”, edited
by A. Dimoulas, E. P. Gusev, P. McIntyre, M. Heyns,
Springer publishing company in the Springer Series
Materials Science, (2005).
- [2000] "High εgate dielectrics Gd2O3 and
Y2O3 for Si”, J. Kwo, M. Hong,
A.R. Kortan, K. T. Queeney, Y. J. Chabal, J. P. Mannaerts,
T. Boone, J. J. Krajewski, A. M. Sergent, and J. M.
Rosamilia, Appl. Phys. Lett., 77, 130, (2000).
- [1999] "Semiconductor-Insulator Interfaces”, M. Hong,
C. T. Liu, H. Reese, and J. Kwo in "Encyclopedia of
Electrical and Electronics Engineering”, 19, p. 87-100,
Ed. by J. G. Webster, Published by John Wiley & Sons,
New York, (1999).
- [1999] "Epitaxial Cubic Gd2O3 as
a Dielectric for GaAs Passivation”, M. Hong, J. Kwo,
A. R. Kortan, J. P. Mannaerts, and A. M. Sergent, SCIENCE,
283, 1897 (1999).
- [1992] "Out of Plane Orbital Characters of Conducting
Holes in La2-xSrxCuO4”,
C. T. Chen, L. H. Tjeng, J. Kwo, H. L. Kao, P. Rudoff,
F. Sette, and R. M. Fleming", Phys. Rev. Lett. 68,
2543, (1992).
- [1992] "Systematic Evolution of Temperature Dependent
Resistivity in La2-xSrxCuO4”,
H. Takagi, B. Batlogg, H. L. Kao, J. Kwo, R. J. Cava,
J. J. Krajewski and W. F. Peck, Jr., Phys. Rev. Lett.
69, 2975, (1992).
- [1991] "Magnetic Rare Earth Superlattices,” C. F.
Majkrzak, J. Kwo, M. Hong, Y. Yafet, D. Gibbs, C. L.
Chien and J. Bohr, Journal of Advances in Physics,
40, 99-189, (1991).
- [1988] "Crystal Structure of the 80K Superconductor
YBa2Cu4O8”, P. Marsh,
R. M. Fleming, M. L. Mandich, A. M. DeSantolo, J. Kwo,
M. Hong, L. Maratinez-Miranda, NATURE V334, 141, (1988).
- [1988] "In-situ Epitaxial Growth of YBa2Cu3O7-x Films
by Molecular Beam Epitaxy with an Activated Oxygen
Source”, J. Kwo, M. Hong, D. J. Trevor, R. M. Fleming,
A. E. White, R. C. Farrow, A. R. Kortan, and K. N.
Short, Appl. Phys. Lett. 53, 2683, (1988).
- [1987] "Synthesis of Rare Earth Films and Superlattices”
J. Kwo, a chapter in "Thin Film Techniques for Low
Dimensional Structures", Edited by R. F. C. Farrow,
S. S. P. Parkin, P. J. Dobson, N. H. Neave, and A.
S. Arrott, NATO ASI Series B, Physics 13, p. 337, Plenum
Publisher (1987).
- [1985] "Magnetic and Structural Properties of Single
Crystal Rare-Earth Gd/Y Superlattices”, J. Kwo, E.
M. Gyorgy, D. B. McWhan, M. Hong, F. J. Di Salvo, C.
Vettier and J. E. Bower, Phys. Rev. Lett. 55, 1402
(1985).
- [1981] "Superconducting Tunneling into Al5 Nb3Al
Thin Films”, J. Kwo and T. H. Geballe, Phys. Rev. B23,
3230 (1981).
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- All
Publications (Expansible)
A. Refereed Papers:
- "Nb3Al Thin-Film Synthesis by
Electron-Beam Coevaporation", J. Kwo, R. H.
Hammond, and T. H. Geballe, J. Appl. Phys.,
51, 172, (1980).
- "Superconducting Tunneling into Al5 Nb3Al
Thin Films", J. Kwo and T. H. Geballe, Phys.
Rev. B23, 3230 (1981).
- "Microscopic Parameters of Al5 Nb3 Al,
How Important is the Band Density of States?",
J. Kwo, T. P. Orlando and M. R. Beasley, Phys.
Rev. B24, 2506 (1981).
- "Stabilization and Strong Coupling Properties
of High Transition Temperature Superconductors",
T. H. Geballe, R. H. Hammond and J. Kwo, in
"Synthesis and Properties of Metastable Phases”,
ed. E. S. Machlin and T. J. Rowland, p. 67,
(1981).
- "CW Laser Annealing of Nb3Al and Nb3Si",
T. Shibata, J. F. Gibbons, J. Kwo, R. D. Feldman
and T. H. Geballe, J. Appl. Phys. 52, 1537
(1981).
- "The Role of Disorder in Maximizing the Upper
Critical Fields in the Nb-Sn System", T. P.
Orlando, J. A. Alexander, S. J. Bending, J.
Kwo, S. J. Poon, R. H. Hammond, M. R. Beasley,
E. J. McNiff, Jr., and S. Foner, IEEE Trans.
Mag. MAG-17, 368 (1981).
- "Tunneling into the Al5 Compounds", J. Kwo and T. H. Geballe, Physica 109 & 110B, 1665 (1982).
- "XPS Study of Surface Oxidation of Nb/Al
Overlayer Structures", J. Kwo, G. K. Wertheim,
M. Gurvitch and D. N. E. Buchanan, Appl. Phys.
Lett. 40, 675 (1982).
- "XPS and Tunneling Study of Air-Oxidized
Overlayer Structures of Nb with Thin Mg, Y
and Er", J. Kwo, G. K. Wertheim, M. Gurvitch
and D. N. E. Buchanan, IEEE Trans. Mag. MAG-19,
791 (1983).
- "Tunneling and Surface Properties of Oxidized
Thin Metal Overlayers on Nb", M. Gurvitch and
J. Kwo, Advances in Cryogenic Engineering,
30, 509 (1984).
- "XPS Study of Bonding in Ligated Au Clusters",
G. K. Wertheim, J. Kwo, B. K. Teo, and K. A.
Keating, Sol. State Commun., 55, 357 (1985).
- "Structural Properties of Single Crystal
Rare-Earth Thin Films Y and Gd Grown by Molecular
Beam Epitaxy", J. Kwo, D. B. McWhan, M. Hong,
E. M. Gyorgy, L. C. Feldmann, and J. E. Cunningham,
in"Layered Structures, Epitaxy and Interfaces”,
Materials Research Society, eds. Gibson, and
Dawson, 37, 509 (1985).
- "Properties of Rare-Earth Metal Superlattices
Grown by Molecular Beam Epitaxy", J. Kwo, E.
M. Gyorgy, M. Hong, W. P. Lowe, D. B. McWhan
and R. Superfine, J. Appl. Phys. 57, 3672 (1985).
- "Magnetic and Structural Properties of Single
Crystal Rare-Earth Gd/Y Superlattices", J.
Kwo, E. M. Gyorgy, D. B. McWhan, M. Hong, F.
J. Di Salvo, C. Vettier and J. E. Bower, Phys.
Rev. Lett. 55, 1402 (1985).
- "Magnetic Properties of Single Crystal Rare
Earth Gd-Y Superlattices", J. Kwo, E. M. Gyorgy,
F. J. Di Salvo, M. Hong, Y. Yafet and D. B.
McWhan, J. Magnetism and Magnetic Materials,
54-57, 771, (1986).
- "Magnetic X-ray Scattering Study of Interfacial
Magnetism in a Gd-Y Superlattice", C. Vettier,
D. B. McMhan, E. M. Gyorgy, J. Kwo, B. M. Buntschuh
and B. W. Batterman, Phys. Rev. Lett. 56, 757,
(1986).
- "Magnetic X-ray Scattering From Superlattices",
D. B. McWhan, C. Vettier, E. M. Gyorgy, J.
Kwo, B. Buntschuh and B. Batterman, J. Magnetism
and Magnetic Materials, 54-57, 7751, (1986).
- "Structural and Magnetic Properties of Single
Crystal Rare-Earth Gd/Y Superlattices", J.
Kwo, D. B. McWhan, F. J. Di Salvo, E. M. Gyorgy,
and M. Hong, in "Layered Structures and Epitaxy”,
Materials Research Society, eds. Gibson, Osbourn,
and Tromp, 56, 211, (1986).
- "Growth of Rare Earth Single Crystals by
MBE: An Epitaxial Relationship Between hcp
Rare Earth and bcc Nb", J. Kwo, M. Hong and
D. B. McWhan, Appl. Phys. Lett. 49, 319, (1986).
- "Dipole-Dipole Interactions and 2-dimensional
Ferromagnetism", Y. Yafet, J. Kwo and E. M.
Gyorgy, Phys. Rev., Brief Report, 33, 6519,
(1986).
- "Observation of a Magnetic Antiphase Domain
Structure with Long-Range Order in a Synthetic
Gd-Y Superlattice", C. F. Majkrzak, J. W. Cable,
J. Kwo, M. Hong, D. B. McWhan, Y. Yafet, J.
V. Waszczak, and C. Vettier, Phys. Rev. Lett.
56, 2700, (1986).
- "Synthesis of Rare Earth Films and Superlattices" J. Kwo, in "Thin Film Techniques for Low Dimensional Structures", Edited by R. F. C. Farrow, S. S. P. Parkin, P. J. Dobson, N. H. Neave and A. S. Arrott, NATO ASI Series B, Physics 13, p. 337, Plenum Publisher Corporation (1987).
- "Polarized Neutron Diffraction Studies of
Gd-Y Synthetic Superlattices", C. F. Majkrzak,
J. W. Cable, J. Kwo, M. Hong, D. B. McWhan,
Y. Yafet, J. V. Waszczak, H. Grimm, and C.
Vettier, J. Appl. Phys. 61, 4055, (1987).
- "Synthetic Magnetic Rare-Earth Dy-Y Superlattices",
M. Hong, R. M. Fleming, J. Kwo, L. F. Schneemeyer,
J. V. Waszczak, J. P. Mannaerts, C. F. Majkrzak,
D. Gibbs, and J. Bohr, J. Appl. Phys. 61, 4052,
(1987).
- "Modulated Magnetic Properties in Synthetic
Rare Earth Gd-Y Superlattices", J. Kwo, M.
Hong, F. J. Di Salvo, J. V. Waszczak, C. F.
Majkrzak, Phys. Rev. B. Rapid Comm. 35, 7925,
(1987).
- "Antiphase Domain Boundaries in the Superconducting
Phase of Y-Ba-Cu-O System", C. H. Chen, D.
J. Werder, S. H. Liou, J. Kwo, and M. Hong,
Phys. Rev. B35, 8767, (1987).
- "Break-Junction Tunneling Measurements of
the High Tc Superconductor YBa2Cu3O9-δ ”,
J. Moreland, J. W. Ekin, L. F. Goodrich, T.
E. Capobianco, A. F. Clark, J. Kwo, M. Hong,
and S. H. Liou, Phys. Rev. B35, 8856 (1987).
- "Transport Critical-Current Characteristics
of YBa2Cu3O7-x ”,
J. W. Ekin, A. J. Panson, A. I. Braginski,
M. A. Janocko, M. Hong, J. Kwo, S. H. Liou,
D. W. Capone, II, and B. Flandermeyer, in "High
Temperature Superconductors”, Materials Research
Society , Eds. D. V. Gubser and M. Schluter,
EA-11, p. 223, (1987).
- "Superconducting Y-Ba-Cu-O Oxide Films by
Sputtering", M. Hong, S. H. Liou, J. Kwo, and
B. A. Davidson, Appl. Phys. Lett. 51, 694 (1987).
- "Single Crystal Superconducting YBa2Cu3O7-x Oxide
Films by Molecular Bean Epitaxy", J. Kwo, M.
Hong, R. M. Fleming, T. C. Hsieh, S. Liou,
and B. A. Davidson, Conf. Proc. of International
Workshop on "Novel Mechanism of Superconductivity",
Plenum Press, New York, 1987, p. 699.
- "Structural and Superconducting Properties
of Orientation-ordered YBa2Cu3O7-x Films
Prepared by Molecular Beam Epitaxy", J. Kwo,
T. C. Hsieh, R. M. Fleming, M. Hong, S. H.
Liou, B. A. Davidson, L. C. Feldman, Phys.
Rev. B56, 4039 (1987).
- "Evidence for Weak Link and Anisotropy Limitations
on the Transport Critical Current in Bulk Polycrystalline
YBa2Cu3O7-x ,
J. W. Ekin, A. I. Braginski, A. J. Panson,
M. A. Janocko, D. W. Capone II, N. J. Zaluzec,
B. Flandermeyer, O. F. de Lima, M. Hong, J.
Kwo and S. H. Liou, J. Appl. Phys.62, 4821
(1987).
- "Raman Detection of Superconducting Gap in
Ba-Y-Cu-O Superconductor", K. B. Lyons, S.
H. Liou, M. Hong, H. S. Chen, J. Kwo and T.
J. Negron, Phys. Rev. B36, 5592 (1987).
- "Low Magnetic Field Superconducting Phase
Diagram of the High Tc YBa2Cu3O9-δ",
J. E. Drumheller, G. V. Rubenacker, W. K. Ford,
J. Anderson, M. Hong, S. H. Liou, J. Kwo and
C. T. Chen, Solid State Comm. 64, 509 (1987).
- "Observation of Hexagonally Ordered Flux
Quanta in YBa2Cu3O7-x ",
P. L. Gammel, D. J. Bishop, G. J. Dolan, J.
Kwo, C. A. Murray, L. F. Schneemeyer and J.
V. Waszczak, Phys. Rev. Lett. 59, 2592 (1987).
- "A Versatile Metallo-Organic Process for
Preparing Superconducting Thin Films", M. E.
Gross, M. Hong, S. H. Liou, P. K. Gallagher
and J. Kwo, Appl. Phys. Lett. 52, 160 (1988).
- "Oxygen Defect in YBa2Cu3Ox:
An X-Ray Photoemission Approach", W. K. Ford,
C. T. Chen, J. Anderson, J. Kwo, S. H. Liou,
M. Hong, G. V. Rubenacker and J. E. Drumheller,
Phys. Rev. B, Rapid Comm. 37, 7924 (1988).
- "Epitaxial Films of High Tc Oxide Superconductor
YBa2Cu3O7 Grown
on SrTiO3 by Molecular Beam Epitaxy",
J. Kwo, T. C. Hsieh, M. Hong, R. M. Fleming,
S. H. Liou, B. A. Davidson and L. C. Feldman,
Proc. of Materials Research Society, 99, 339
(1988).
- "Ion-Beam-Induced Destruction of Superconducting
Phase Coherence in YBa2Cu3O7-δ",
A. E. White, K. T. Short, D. C. Jacobson, J.
M. Poate, R. C. Dynes, P. M. Mankiewich, W.
I. Skocpol, R. E. Howard, M. Anslowar, K. W.
Baldwin, A. F. J. Levi, J. Kwo, T. C. Hsieh
and M. Hong, Phys. Rev. B, Rapid Comm.37, 3755
(1988).
- "Ion-Beam-Induced Destruction of Superconducting
Phase Coherence in YBa2Cu3O7-δ",
A. E. White, K. T. Short, D. C. Jacobson, J.
M. Poate, R. C. Dynes, P. M. Mankiewich, W.
J. Skocpol, R. E. Howard, M. Anslowar, K. W.
Baldwin, A. F. J. Levi, J. Kwo, T. C. Hsieh
and M. Hong, Proc. of Materials Research Society,
99, 531 (1988).
- "Observation of Hexagonally Ordered Flux
Quanta in YBa2Cu3O7-δ”,
P. L. Gammel, D. J. Bishop, G. J. Dolan, J.
Kwo, C. A. Murray, L. F. Schneemeyer and J.
V. Waszczak, Proc. of Materials. Research Society
Fall Meeting, Boston, 99, (1988).
- "Magnetic Rare Earth Superlattices", C. F.
Majkrzak, D. Gibbs, P. Boni, A. I. Goldman,
J. Kwo, M. Hong, T. C. Hsieh, R. M. Fleming,
D. B. McWhan, Y. Yafet, J. W. Cable, J. Bohr,
H. Grimm and C. L. Chien, Proc. of the 23rd
Annual Conf. on Magnetism & Magnetic Materials,
J Appl. Phys. 63, 3447 (1988).
- "Interlayer Exchange in Magnetic Superlattices",
Y. Yafet, J. Kwo, M. Hong and C. F. Majkrzak,
J. Appl. Phys. 63, 3453 (1988).
- "Electronic Excitations of YBa2Cu3O7-x Superconductor:
a Study by Transmission Electron Energy Loss
Spectroscopy with an Electron Microprobe",
C. H. Chen, L. F. Schneemeyer, S. H. Liou,
M. Hong, J. Kwo and H. S. Chen, Phys. Rev.
B, Rapid Commun. 37, 9780 (1988).
- "Microstructure of YBa2Cu3O7-x Superconducting
Thin Films Grown on SiTiO3 (100)
Substrates", C. H. Chen, J. Kwo and M. Hong,
Appl. Phys. Lett. 52, 841 (1988).
- "High Tc Superconducting Y-Ba-Cu-O Oxide
Films by Sputtering and Molecular Beam Epitaxy:
Morphology, Structural Characterization and
Superconducting Properties", S. H. Liou, M.
Hong, B. A. Davidson, R. C. Farrow, J. Kwo,
T. C. Hsieh, R. M. Fleming, H. S. Chen, L.
C. Feldman, A. R. Kortan, and R. J. Felder,
AIP Conf. Proc. 165, 12 (1988).
- "Thin Films Research of High Tc Superconductors",
M. Hong, J. Kwo, C. H. Chen, R. M. Fleming,
S. H. Liou, M. E. Gross, B. A. Davidson, H.
S. Chen, S. Nakahara and T. Boone, Conf. Proc.
of American Institute of Physics, 165, 189
(1988).
- "Y-Ba-Cu-O Films by rf Magnetron Sputtering
Using Single Composite Targets: Superconducting
and Structural Properties", S. H. Liou, M.
Hong, J. Kwo, B. A. Davidson, H. S. Chen, S.
Nakahara, T. Boone and R. J. Felder, Appl.
Phys. Lett. 52, 1735 (1988).
- "Observation of a Halide (F/Cl) Stabilized,
New Perovskite Phase in Superconducting YBa2Cu3O7-x Films",
J. Kwo, M. Hong, R. M. Fleming, A. F. Hebard,
M. L. Mandich, A. M. DeSantolo, B. A. Davidson,
P. Marsh and N. D. Hobbins, Appl. Phys. Lett.
52, 1625 (1988).
- "High Critical Current Superconducting Bi-Sr-Ca-Cu-O
Films by Sputtering", M. Hong, J. Kwo and J.
J. Yeh, J. Crystal Growth, 91, 382 (1988).
- "High Temperature Superconducting Oxide Films",
M. Hong, J. Kwo and C. H. Chen, Proc. of 38th
Electronic Components Conf. p. 146, (1988),
IEEE Trans Components, Hybrids and Manufacturing
Technology, 11, 407, (1988).
- "Superconducting Properties of a 27Å Phase
of Ba-Y-Cu-O", M. L. Mandich, A. M. DeSantolo,
R. M. Fleming, P. Marsh, S. Nakahara, S. Sunshine,
J. Kwo, M. Hong, T. Boone, T. Y.Kometani and
L. Martinez-Miranda, Phys. Rev. B38, 5031 (1988).
- "Preparation of High Tc and Jc Films
of YaB2Cu3O7-δ by
Laser Evaporation and Observation of Superconductivity
in a 27Å phase", M. L. Mandich, A. M.
DeSantolo, R. M. Fleming, P. Marsh, L. Martinez-Miranda,
S. Nakahara, S. Sunshine, J. R. Kwo, M. Hong,
T. Boone, B. A. Davidson and T. Kometani, SPIE.
948, 66 (1988).
- "Tunneling Characteristics of Internal Josephson
Junctions in YaB2Cu3O7-δ W.
S. Brocklesby, D. P. Monroe, M. Hong, S. H.
Liou, J. Kwo, G. J. Fisanick, P. M. Mankiewich,
and R. E. Howard, Phys. Rev. B, 38, 11805,
(1988).
- "Crystal Structure of the 80K Superconductor
YBa2Cu4O8", P. Marsh, R. M. Fleming, M. L. Mandich, A. M. DeSantolo, J. Kwo, M. Hong, L. Maratinez-Miranda,
Nature, 334, 141, 1988.
- "Physical Processing Effects on Polycrystalline
YBa2Cu3Ox",
W. K. Ford, J. Anderson, G. V. Rubenacker,
J. E. Drumheller, C. T. Chen, M. Hong, J. Kwo
and S. H. Liou, Journal of Mat. Research, 4,
16, (1989).
- "Superconducting Tl-Ba-Ca-Cu-O Films by Sputtering",
M. Hong, S. H. Liou, D. D. Bacon, G. S. Grader,
J. Kwo, A. R. Kortan and B. A. Davidson, Appl.
Phys. Lett. 53, 2104, (1988).
- "Magnetic Superlattices", J. Kwo, M. Hong,
D. B. McWhan, Y. Yafet, R. M. Fleming, F. J.
DiSalvo, J. V. Waszczak, C. F. Majkrzak, D.
Gibbs, A. I. Goldman, P. Boni, J. Bohr, H.
Grimm, C. L. Chien, and J. W. Cable, Proc.
of ICM 88, Journal de Physique, Colloque, C8,
1651, (1988).
- "Transport Properties of High Tc Superconducting
Oxides", A. T. Fiory, G. P. Espinosa, R. M.
Fleming, G. S. Grader, M. Gurvitch, A. F. Hebard,
R. E. Howard, J. Kwo, A. F. J. Levi, P. M.
Mankiewich, S. Martin, C. E. Rice, L. F. Schneemeyer
and A. E. White, JSAP-MRS Int'l. Conf. on Electrical
Materials, Ed. T. Sugano, R. P. H. Chang, H.
Kamimura, I. Hanyashi, and T. Kamiya, (Materials
Research Society, Pittsburgh, PA), p. 3-8,
(1989).
- "In-situ Epitaxial Growth of YBa2Cu3O7-x Films
by Molecular Beam Epitaxy with an Activated
Oxygen Source", J. Kwo, M. Hong, D. J. Trevor,
R. M. Fleming, A. E. White, R. C. Farrow, A.
R. Kortan, and K. N. Short, Appl. Phys. Lett.
53, 2683, (1988).
- "Superconducting Bi-Sr-Ca-Cu-O Films by Sputtering
using a Single Target", M. Hong, J. J. Yeh,
J. Kwo, R. J. Felder, A. Miller, K. Nassau,
and D. D. Bacon, AIP Conf. Proc. of Am. Vac.
Soc. Meeting, 182, 122, (1989).
- "Single-phase High Tc Superconducting
Tl2Ba2Ca2Cu3O10 Films",
M. Hong, S. H. Liou, J. Kwo, C. H. Chen, A.
R. Kortan, and D. D. Bacon, AIP Conf Proc.
of Am. Vac. Soc. Meeting, 182, 1017, (1989).
- "Properties of In-situ Superconducting YBa2Cu3O7-x Films
By Molecular Beam Epitaxy with an Activated
Oxygen Source", J. Kwo, M. Hong, D. J. Trevor,
R. M. Fleming, A. E. White, R. C. Farrow, A.
R. Kortan, and K. N. Short, Science and Technology
of Thin Film Superconductors, Plenum Press,
London and New York, p. 101, (1989).
- "Tl-Based Superconducting Films By Sputtering
Using a Single Target", S. H. Liou, M. Hong,
A. R. Kortan, J. Kwo, D. D. Bacon, C. H. Chen,
R. C. Farrow, and G. S. Grader, Science and
Technology of Thin Film Superconductors, Plenum
Press, London and New York, p. 229, (1989).
- "Superlattice Modulation and Epitaxy of Tl2Ba2Ca2Cu3O10 Thin
Films Grown on MgO and SrTiO3 Substrates",
C. H. Chen, M. Hong, D. J. Werder, J. Kwo,
S. H. Liou, and D. D. Bacon, Appl. Phys. Lett.,
54, 1579, (1989).
- "Electrical Response of Superconducting YBa2Cu3O7-x To
Light", W. S. Brocklesby, Don Monroe, A. F.
J. Levi, M. Hong, J. Kwo, C. E. Rice, P. M.
Mankiewich, R. E. Howard, and S. H. Liou, Appl.
Phys. Lett. 54, 1175, (1989).
- "Diffraction Studies of Rare Earth Metals
and Superlattices", J. Bohr, Doon Gibbs, J.
D. Axe, D. E. Moncton, K. L. D'Amico, C. F.
Majkrzak, J. Kwo, M. Hong, C. L. Chien, and
J. Jenson, Conf. Proc. of Workshop on "X-ray
and Neutron Scattering from Magnetic Materials",
Physica B, 93, (1989).
- "In-situ Growth of YBa2Cu3O7-x Films
by Molecular Beam Epitaxy with an Activated
Oxygen Source", J. Kwo, M. Hong, D. J. Trevor,
R. M. Fleming, A. E. White, J. P. Mannaerts,
A. R. Kortan, and K. T. Short, Physica C, 162-164,
623, (1989).
- "Properties of Superconducting Tl2Ba2Ca2Cu3O10 Films
by Sputtering", M. Hong, J. Kwo, C. H. Chen,
A. R. Kortan, D. D. Bacon, S. H. Liou, Thin
Solid Films. 181, 173-180, (1989).
- "Materials and Tunneling Characteristics
of HTSC YBa2Cu3O7-x Thin
Films by Molecular Beam Epitaxy", J. Kwo, M.
Hong, T. A. Fulton, P. L. Gammel, and J. P.
Mannaerts, in SPIE. 1187, "Processing of Films
for High Tc Superconducting Electronics",
p. 57. (1989).
- "Observations of Quasiparticle Tunneling
and Josephson Behavior in YBa2Cu3O7-x native
barrier/Pb Thin Film Junctions," J. Kwo, T.
A. Fulton, M. Hong and P. L. Gammel, Appl.
Phys. Lett. 56, 788, (1990).
- "The Search for Circular Dichroism in High
Tc Superconductors," K. B. Lyons,
J. Kwo, J. F. Dillon, Jr., G. P. Espinosa,
M. McGlashan-Powell, A. P. Ramirez and L. F.
Schneemeyer, Phys. Rev. Lett. 64, 2949, (1990).
- "Magnetic Properties of Gd/Dy Superlattices:
Experiment and Theory," R. E. Camley, J. Kwo,
M. Hong and C. L. Chien, Phys. Rev. Lett. 64,
2703, (1990).
- "Materials and Tunneling Characteristics
of YBa2Cu3O7-x Films
Grown by Molecular Beam Epitaxy," J. Kwo, Conf.
Proc. of 2nd ISTEC Workshop on Superconductivity,
Kagoshima, Japan, 5/28-30, 1990.
- "Growth and Properties of High Tc Films in YBa2Cu3O7-x Perovskite by Molecular Beam Epitaxy," J. Kwo, Journal of Crystal Growth, 111, 965, (1991).
- "Magnetic Rare Earth Superlattices," C. F. Majkrzak, J. Kwo, M. Hong, Y. Yafet, D. Gibbs, C. L. Chien and J. Bohr, Journal of Advances in Physics, 40, 99-189, (1991).
- "MBE Growth and Properties of Fe3(Al,
Si) on GaAs(100),"M. Hong, H. S. Chen, J. Kwo,
A. R. Kortan, J. P. Mannaerts, B. Weir and
L. C. Feldman, J. Crystal Growth, 111, 984,
(1991).
- "A Simple Way to Reduce Series Resistance
in P-Doped Semiconductor Distributed Bragg
Reflector," M. Hong, J. P. Mannaerts, J. M.
Hong, R. J. Fisher, K. Tai, J. Kwo, J. M. Vandenberg,
Y. H. Wang and J. Gamelin, J. of Crystal Growth,
111, 1052, (1991).
- "In-situ Growth and Properties of Single
Crystalline-like La2-xSrxCuO4 Epitaxial
Films by Off-axis Sputtering", H. L. Kao, J.
Kwo, R. M. Fleming, M. Hong, and J. P. Mannaerts,
Appl. Phys. Lett. 59, 2748, (1991).
- "Transport Properties of the La2-xSrxCuO4 compound",
H. Takagi, B. Batlogg, R. J. Cava, J. Kwo,
H. L. Kao, and M. Marezio, Conf. Proc. of the
Materials and Mechanism of Superconductivity,
July 22 -26, 1991, Japan.
- "Study of Intermetallic Compound Fe3AlxSi1-x Epitaxially
Grown on GaAs by Transmission Electron Microscopy," Y.
F. Hsieh, M. Hong, J. Kwo, A. R. Kortan, H-S.
Chen and J. P. Mannaerts, Conf. Proc. of the
18th International Symposium on Gallium Arsenide
and Related Compounds, (1991).
- "High Temperature Superconducting Single
Crystalline-like La2-xSrxCuO4 Epitaxial
Films," J. Kwo and H. L. Kao, Conf. Proc. of
the 4th Annual U.S./Japan Workshop on Superconductivity,
Gaithersburg, MD, 11/25-26, (1991).
- "La2-xSrxCuO4 Films
of Tilted CuO2 Planes," J. Kwo,
R. M. Fleming, H. L. Kao, D. J. Werder and
C. H. Chen, Appl. Phys. Lett. 60, 1905, (1992).
- "Scanning Hall Probe Microscopy of a Vortex
and Field Fluctuations in La2-xSrxCuO4 Films," A.
M. Chang, H. D. Hallen, H. F. Hess, H. L. Kao,
J. Kwo, A. Sudbo, and T. Y. Chang, Euro. Phys.
Lett. 20, 645, (1992).
- "Scanning Hall Probe Microscopy," A. M. Chang,
H. D. Hallen, L. Harriott, H. F. Hess, H. L.
Kao, J. Kwo, R. E. Miller, R. Wolfe, J. van
der Ziel and T. Y. Chang, Appl. Phys. Lett.
61, 1974, (1992).
- "Systematic Evolution of Temperature Dependent
Resistivity in La2-xSrxCuO4",
H. Takagi, B. Batlogg, H. L. Kao, J. Kwo, R.
J. Cava, J. J. Krajewski and W. F. Peck, Jr.,
Phys. Rev. Lett. 69, 2975, (1992).
- "Out of Plane Orbital Characters of Conducting
Holes in La2-xSrxCuO4",
C. T. Chen, L. H. Tjeng, J. Kwo, H. L. Kao,
P. Rudoff, F. Sette, and R. M. Fleming, Phys.
Rev. Lett. 68, 2543, (1992).
- Reply to the Comments by K. H. Johnson, D.
P. Clougherty, and M. E. McHenry, C. T. Chen,
L. H. Tjeng, J. Kwo, H. L. Kao, F. Sette, and
R. M. Fleming, Phys. Rev. Lett. 69, (1992).
- "Microstructures of Thin Film La2-xSrxCuO4 on
SrTiO3 and LaAlO3", D.
J. Werder, C. H. Chen, H. L. Kao, and J. Kwo,
Physica C.204, 155, (1992).
- "Charge Dynamics in Metallic CuO2 Layers",
B. Batlogg, H. Takagi, H. L. Kao, and J. Kwo,
in Electronic Properties of High Tc Superconductors,
The Normal and Superconducting State, Ed. H.
Kuzmany et al, Springer Series in Solid-State
Sciences, 113, Springer-Verlog, Berlin, Heidelberg
(1993).
- "Magnetic Properties of Epitaxial Single
Crystal Ultra-thin Fe3Si Films on
GaAs (001)", S. H. Liou, S. S. Malhotra, J.
X. Shen, M. Hong, J. Kwo, H. S. Chen, and J.
P. Mannaerts, J. of Appl. Phys. 73, 6766, (1993).
- "Broken Time Reversal Symmetry in Cuprate
Superconductors: The Non-Reciprocal Polar Kerr
Effect," K. B. Lyons, J. Dillon, S. Duclos,
C. B. Eom, H. L. Kao, J. Kwo, J. M. Phillips
and M. P. Siegel, Phys. Rev. B, 47, 8195, (1993).
- "Systematic Evolution of Transport Anisotropy
of La2-xSrxCuO4 as
a Function of Doping", H. L. Kao, J. Kwo, H.
Takagi, and B. Batlogg, Phys. Rev. B. Rapid
Comm. 48, 9925, (1993).
- "Scaling of the Temperature Dependent Hall
Effect in La2-xSrxCuO4",
H. Y. Hwang, B. Batlogg, H. Takagi, H. L. Kao,
J. Kwo, R. J. Cava, J. J. Krajewski and W.
F. Peck, Jr., Phys. Rev. Lett. 69, 2975, (1994).
- "Temperature Dependence of the Resonant Magnetic
X-ray Scattering in Holmium," G. Helgesen,
T. Thurston, J. P. Hill, D. Gibbs, J. Kwo and
M. Hong, Phys. Rev. B50, 2990, (1994).
- "GaInO3: A New Transparent Conducting
Oxide", R. J. Cava, J. M. Phillips, J. Kwo,
G. A.Thomas, R. B. van Dover, S. A. Carter,
J. J. Krajewski, W. F. Peck, J. H. Marshall,
and D. H. Rapkine, R. J. Cava, J. M. Phillips,
J. Kwo, G. A. Thomas, R. B. van Dover, S. A.
Carter, J. J. Krajewski, W. F. Peck, Jr., J.
H. Marshall and D. H. Rapkine, Appl. Phys.
Lett. 64, 2071, (1994).
- "Transparent Conducting Thin Films of GaInO3," J.
M. Phillips, J. Kwo, G. A. Thomas, S. A. Carter,
R. J. Cava, S. Y. Hou, J. J. Krajewski, J.
H. Marshall, W. F. Peck, Jr., D. H. Rapkine
and R. B. van Dover, Appl. Phys. Lett. 65,
115, (1994).
- "Transprent Conducting Films of GaInO3 by
Sputtering," J. Kwo, S. A. Carter, R. J. Cava,
S. Y. Hou, J. M. Phillips, D. H. Rapkine, G.
A. Thomas, and R. B. Van Dover, Mat. Res. Soc.
Sympos. Proc. 345, p. 241, (1994).
- "Transparent Conducting Films Grown by Pulsed
Laser Deposition," J. M. Phillips, R. J. Cava,
S. Y. Hou, J. J. Krajewski, J. Kwo, J. H. Marshall,
W. F. Peck, Jr., D. H. Rapkine, G. A. Thomas
and R. B. van Dover, Mat. Res. Soc. Sympos.
Proc., 345, p. 255, (1994).
- "Growth and Characterization of Ba0.5Sr0.5TiO3 Thin
Films on Si (100) by 90°Off-Axis," S. Y. Hou,
J. Kwo, R. K. Watts, D. J. Werder, J. Shmulovich
and H. M. O'Bryan, Mat. Res. Soc. Symp. Proc.
343, p. 457, (1994).
- "Charge Dynamics in La2-xSrxCuO4 from
Underdoping to Overdoping," B. Batlogg, H.
Y. Hwang, H. Takagi, H. L. Kao, J. Kwo, and
R. J. Cava, J. of Low Temp. Phys. 95, 23 (1994).
- "Normal State Phase Diagram of La2-xSrxCuO4 from
Charge and Spin Dynamics," B. Batlogg, H. Y.
Hwang, H. Takagi, R. J. Cava, H. L. Kao, and
J. Kwo, Physica C 235-240, 130-133 (1994).
- "Low-Resistivity Non-Alloyed Ohmic Contacts
to p- and n-GaAs Using In-Situ Integrated Process,"M.
Hong, D. Vakhshoori, J. P. Mannaerts and J.
Kwo, Mat. Res. Soc. Proc. 337, p. 287, (1994).
- "In-Situ Fabricated Ga2O3-GaAs
Structures with Low Interface Recombination
Velocity," M. Passlack, M. Hong, E. F. Schubert,
J. Kwo, J. P. Mannaerts, S. N. G. Chu, N. Moriya
and F. A. Thiel, Appl. Phys. Lett. 66, 625,
(1995).
- "Zinc Indium-Oxide: A High Conductivity Transparent
Conducting Oxide," J. M. Phillips, R. J. Cava,
G. A. Thomas, S. A.Carter, J. Kwo, T. Siegrist,
J. J. Krajeski, J. H. Marhsall, W. F. Peck,
Jr. and D. H. Rapkine, Appl. Phys. Lett. 67,
2246, (1995).
- "Heteroepitaxial Growth of Ba0.5Sr0.5TiO3/SrRuO3 on
YSZ/Si by Off-Axis Sputtering", S. Y. Hou,
J. Kwo, R. K. Watts, J. Y. Cheng, R. J. Cava,
W. F. Peck, and D. K. Fork, Mat. Res. Soc.
Symp. Proc., 361, p. 99, (1995).
- "Structure and Properties of Epitaxial Ba0.5Sr0.5TiO3/SrRuO3/YSZ
Heterostructure on Si Grown by 90 degree Off-Axis
Sputtering," S. Y. Hou, J. Kwo, R. K. Watts,
J. Y. Cheng and D. K. Fork, Appl. Phys. Lett.
67, 1387, (1995).
- "Heteroepitaxial Ba1-xKxBiO3/
La2-xSrxCuO4 Tunnel
Junctions," E. S. Hellman, J. Kwo, A. Kussmaul
and E. H. Hartford, Jr., Physica C. 251, 133,
(1995).
- "Structural and Dielectric Properties of
Ba0.5Sr0.5TiO3 Thin
Films Grown on Si by Off-Axis Sputtering," S.
Y. Hou, J. Kwo, R. K. Watts, J. Y. Cheng and
D. K. Fork, Integrated Ferroelectrics, 10.
p. 343, (1996).
- "Recombination Velocity at Oxide-GaAs interface
Fabricated by In-situ Molecular Beam Epitaxay”,
M. Passlack, M. Hong, J. P. Mannaerts, J. Kwo,
and L. W. Tu, Appl. Phys. Lett, 68, 3605, (1996).
- "Low Interface State Density Oxide-GaAs Structures
Fabricated by In-Situ Molecular Beam Epitaxy," M.
Hong, M. Passlack, J. P. Mannaerts, J. Kwo,
S. N. G. Chu, N. Moriya, S. Y. Hou and V. J.
Fratello, J. of Vacuum Science Tech. B 14(3),
2297, (1996).
- "GaAs Surface Passivation Using In-situ Oxide
Deposition", M. Passlack, M. Hong, R. L. Opila,
J. P. Mannaerts, and J. Kwo, Journal of Applied
Surface Science, 104-105, p. 441, (1996).
- "Novel Heterostructures Produced Using In-situ
Molecular Beam Epitaxy", M. Hong, M. Passlack,
D. Y. Noh, J. Kwo, and J. P. Mannaerts, in "State-of-the-art
program on compound semiconductors XXIV" Ed.
F. Ren et al, ECS The Electrochemical Society,
p. 36, (1996).
- "Enhancement-Mode p-channel GaAs MOSFETs
on Semi-insulating Substrates", F. Ren, M.
Hong, W. S. Hobson, J. M. Kuo, J. R. Lothian,
J. P. Mannaerts, J. Kwo, Y. K. Chen, and A.
Y. Cho, IEEE International Electron Devices
Meeting, San Francisco, Ca, December 8-11,
1996. IEEE IEDM Conf. Proc. 383, (1996).
- "Low Dit Thermodynamically Stable
Ga2O3-GaAs Interfaces:
Fabrication, Characterization, and Modeling",
M. Passlack, M. Hong, J. P. Mannaerts, J. Kwo,
R. L. Opila, S. N. G. Chu, N. Moriya, and F.
Ren, IEEE Transaction of Electron Devices,
44 No. 2, 214-225, (1997).
- "Novel Ga2O3(Gd2O3)
Passivation Techniques To Produce Low Dit Oxide-GaAs
Interfaces", M. Hong, J. P. Mannaerts, J. E.
Bowers, J. Kwo, M. Passlack, W-Y. Hwang, and
L. W. Tu, J. Crystal Growth, 175/176, pp.422-427,
(1997).
- "Demonstration of Enhancement-Mode p- and
n-Channel GaAs MOSFETs With Ga2O3(Gd2O3) As
Gate Oxide”, F. Ren, M. Hong, W. S. Hobson,
J. M. Kuo, J. R. Lothian, J. P. Mannaerts,
J. Kwo, S. N. G. Chu, Y. K. Chen, and A. Y.
Cho, Solid State Electronics, 41 (11), p.1751,
(1997).
- "Growth of Ga2O3(Gd2O3)
Using Molecular Beam Epitaxy Techniques - Key
to First Demonstration of GaAs MOSFETs", M.
Hong, F. Ren, W. S. Hobson, J. M. Kuo, J. Kwo,
J. P. Mannaerts, J. R. Lothian, M. A. Marcus,
C. T. Liu, A. M. Sergent, T. S. Lay, and Y.
K. Chen, 24th IEEE International
Symposium on Compound Semiconductors, IOP series
97th8272, Bristol and Philadelphia,
p. 319-324, (1997).
- "Characterization of The Interfacial Electronic
Properties of Oxide Films on GaAs Fabrication
by In-situ Molecular Beam Epitaxy”, J. S. Hwang,
W. Y. Chou, G. S. Chang, S. L. Tyan, M. Hong,
J. P. Mannaerts, and J. Kwo, pp. 249-253, IOP
series 97TH8272, Bristol and Philadelphia,
(1997). (Based on a contributed paper given
at 1997 24th IEEE International
Symposium on Compound Semiconductors)
- "III-V Compound Semiconductor MOSFETs Using
Ga2O3(Gd2O3)
as Gate Dielectric”, F. Ren, M. Hong, W. S.
Hobson, J. M. Kuo, J. R. Lothian, J. P. Mannaerts,
J. Kwo, S. N. G. Chu, Y. K. Chen, and A. Y.
Cho, GaAs IC Symposium Technical Digest, 97CH36098,
p. 18-21, (1997).
- "Oxide-GaAs Interfacial Electronic Properties
Characterized by Modulation Spectroscopy of
Photoreflectance", J. S. Hwang, S. L. Tyan,
Y. C. Wang, W. Y. Chou, M. Hong, J. Kwo, and
J. P. Mannaerts, J. Appl. Phys., 83 (5), p.2857-9,
(1998).
- "Structural Properties of Ga2O3(Gd2O3)
-GaAs Interfaces”, M. Hong, J. P. Mannaerts,
M. A. Marcus, J. Kwo, A. M. Sergent, L. J.
Chou, K. C. Hsieh, and K. Y. Cheng, J. Vac.
Sci. Technol. B16(3), p.1395, (1998).
- "Depletion Mode GaAs MOSFETs With of Ga2O3(Gd2O3) as
Gate Oxide”, M. Hong, F. Ren, J. M. Kuo, W.
S. Hobson, J. Kwo, J. P. Mannaerts, J. R. Lothian,
and Y. K. Chen, J. Vac. Sci. Technol. B16(3),
p.1398, (1998).
- "A Ga2O3(Gd2O3)
/InGaAs Enhancement-Mode n-Channel MOSFET”,
F. Ren, J. M. Kuo, M. Hong, W. S. Hobson, J.
R. Lothian, J. Lin, W. S. Tseng, J. P. Mannaerts,
J. Kwo, S. N. G. Chu, Y. K. Chen, and A. Y.
Cho, IEEE Electron Device Letters, V. 19, No.
8, p. 309, (1998).
- "Ga2O3(Gd2O3) as
a Gate Dielectric for GaAs MOSFETs”, M. Hong,
J. Kwo, C. T. Liu, M. A. Marcus, T. S. Lay,
F. Ren, J. P. Mannaerts, K. K. Ng , Y. K. Chen,
L. J. Chou, K. C. Hsieh, and K. Y. Cheng, "Light
Emitting Devices for Optoelectronic Applications
and the 28th State-of-the-art program
on compound semiconductors" Ed. H. Q. Hou et
al, ECS The Electrochemical Society Proceedings,
98-2, p. 434-442, (1998).
- "Ga2O3(Gd2O3)
as a Dielectric Insulator for GaAs Device Applications”,
T. S. Lay, M. Hong, J. P. mannaerts, C. T.
Liu, J. Kwo, F. Ren, M. A. Marcus, K. K. Ng
, Y. K. Chen, L. J. Chou, K. C. Hsieh, and
K. Y. Cheng, Conference Proceedings, SPIE-The
International Society for Optical Engineering,
Optoelectronic Materials and Devices, SPIE’s
Asia Pacific Symposium on Optoelectronics ’98,
9-11 July 1998, Taipei, Taiwan.
- "Depletion-Mode GaAs MOSFETs with Negligible
Drain Current Drift and Hysteresis”, Y. C.
Wang, M. Hong, J. M. Kuo, J. P. Mannaerts,
J. Kwo, H. S. Tsai, J. J. Krajewski, Y. K.
Chen, and A. Y. Cho, IEEE International Electron
Devices Meeting, San Francisco, CA, December
6-9, 1998. IEDM Technical Digest pp. 67-70,
(1998).
- "Semiconductor-Insulator Interfaces”, M. Hong, C. T. Liu, H. Reese, and J. Kwo in "Encyclopedia of Electrical and Electronics Engineering”, 19, p. 87-100, Ed. by J. G. Webster, Published by John Wiley & Sons, New York, (1999).
- "Epitaxial Cubic Gd2O3 as
a Dielectric for GaAs Passivation”, M. Hong,
J. Kwo, A. R. Kortan, J. P. Mannaerts, and
A. M. Sergent, Science, 283, p.1897-1900, (1999).
- "Passivation of GaAs Using Gallium-Gadolinium
Oxides”, J. Kwo, D. W. Murphy, M. Hong, J.
P. Mannaerts, R. L. Opila, R. L. Masaitis,
and A. M. Sergent, J. Vac. Sci. Technol. B
17 (3), p.1294-1296, (1999).
- "Single Crystal Cubic Gd2O3 Films
on GaAs – A New Dielectric For GaAs Passivation”,
M. Hong, J. Kwo, A. R. Kortan, J. P. Mannaerts,
M. C. Wu, and A. M. Sergent, in "III-V and
IV-IV Materials and Processing Challenges for
Highly Integrated Microelectonics and Optoelectronics”,
Ed. S. A. Ringel et al, Mat. Res. Soc. Symp.
Proc. 535, p. 151, (1999).
- "Compound Semiconductor MOSFET’s Using (Ga,Gd)2O3 as
Gate Dielectric”, M. Hong, F. Ren, Y. C. Wang,
J. M. Kuo, J. Kwo, J. P. Mannaerts, Y. K. Chen,
and A. Y. Cho, in Int’l. Electron Devices and
Materials Symp., Tainan, Taiwan, R.O.C., IEDMS’98,
p. 78-81, (1998).
- "Ga2O3(Gd2O3)/GaAs
Power MOSFET’s”, Y. C. Wang, M. Hong, J. M.
Kuo, J. P. Mannaerts, H. S. Tsai, J. Kwo, J.
J. Krajewski, Y. K. Chen, and A. Y. Cho, Electronics
Letters, 35, No. 8, 667, (1999).
- "Demonstration of Sub-micron Depletion-Mode
GaAs MOSFET’s with negligible drain current
drift and hysteresis”, Y. C. Wang, M. Hong,
J. M. Kuo, J. P. Mannaerts, J. Kwo, H. S. Tsai,
J. J. Krajewski, Y. K. Chen, and A. Y. Cho,
IEEE Electron Device Letters, 20, p. 457-459,
(1999).
- "The (Ga2O3)1-x(Gd2O3)x
Oxides With x = 0 – 1.0 for GaAs Passivation”,
J. Kwo, M. Hong, A. R. Kortan, D. W. Murphy,
J. P. Mannaerts, A. M. Sergent, Y. C. Wang,
and K. C. Hsieh, in"Compound semiconductor
surface passivation and novel device processing”,
Ed. by H. Hasegawa, M. Hong, Z. H. Lu, and
S. Pearton, Materials Research Society Proc.
573, pp. 57-68, (1999).
- "Structure of Single Crystal Gd2O3 Films
on GaAs (100)”, A. R. Kortan, M. Hong, J. R.
Kwo, J. P. Mannaerts, and N. Kopylov, in "Compound
semiconductor surface passivation and novel
device processing”, Ed. by H. Hasegawa, M.
Hong, Z. H. Lu, and S. Pearton, Materials Research
Society Proc. 573, pp. 21-30, (1999).
- "Advances in GaAs MOSFETs Using Ga2O3(Gd2O3)
as Gate Oxide”, Y. C. Wang, M. Hong, J. M.
Kuo, J. P. Mannaerts, J. Kwo, H. S. Tsai, J.
J. Krajewski, J. S. Weiner, Y. K. Chen, and
A. Y. Cho, in >"Compound semiconductor surface
passivation and novel device processing”, Ed.
by H. Hasegawa, M. Hong, Z. H. Lu, and S. Pearton,
Materials Research Society Proc. 573, pp. 219-226,
(1999).
- "Energy Band Offsets at a Ga2O3(Gd2O3)-GaAs
Interface”, T. S. Lay, M. Hong, J. Kwo, J.
P. Mannaerts, W. H. Hung, and D. J. Huang,
in "Compound semiconductor surface passivation
and novel device processing”, Ed. by H. Hasegawa,
M. Hong, Z. H. Lu, and S. Pearton, Materials
Research Society Proc. 573, pp. 131-136, (1999).
- "Passivation of GaAs Using (Ga2O3)1-x(Gd2O3)x,
(x=0 – 1.0) Films”, J. Kwo, D. W. Murphy, M.
Hong, R. L. Opila, J. P. Mannaerts, R. L. Masaitis,
and A. M. Sergent, Appl. Phys. Lett., 75,1116,
(1999).
- "Structure of Epitaxial Gd2O3 Films
Grown on GaAs (100)”, A. R. Kortan, M. Hong,
J. Kwo, J. P. Mannaerts, and N. Kopylov, Phys.
Rev. B60, 10913, (1999).
- "The Structure of Epitaxial Gd2O3 Films
and Their Registry on GaAs (100) Substrates”,
B. Bolliger, M. Erbudak, M. Hong, J. Kwo, A.
R. Kortan, and J. P. Mannaerts, 8th European
Conf. Proc. On Application of Surface and Interface
Analysis, Oct. 4-8, Svelle, Spain, (1999).
- "Initial Growth of Ga2O3(Gd2O3)
on GaAs – Key to The Attainment of a Low Interfacial
Density of States” M. Hong, Z. H. Lu, J. Kwo,
A. R. Kortan, J. P. Mannaerts, J. J. Krajewski,
K. C. Hsieh, L. J. Chou, and K. Y. Cheng, Appl.
Phys. Lett. 76 (3), 312, (2000).
- "Neutron Scattering on Magnetic Thin Films:
Pushing the Limits”, A. Schreyer, T. Schmitte,
R. Siebrecht, H. Zabel, S. H. Lee, R. W. Erwin,
J. Kwo, M. Hong, and C. F. Majkrzak, an invited
paper in the 44th Annual Conference
on Magnetism and Magnetic Materials, San Jose,
(1999), and J. Appl. Phys. 87 (9), p.5443-5448,
(2000).
- "Characteristics of Ga2O3(Gd2O3)
/GaAs Interface-Structures and Compositions”,
M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts,
J. J. Krajewski, Z. H. Lu, K. C. Hsieh, and
K. Y. Cheng, 18th NAMBE and J. Vac.
Sci. Technol. B18, 1688, (2000).
- "High ε gate dielectrics Gd2O3 and
Y2O3 for Si”, J. Kwo,
M. Hong, A.R. Kortan, K. T. Queeney, Y. J.
Chabal, J. P. Mannaerts, T. Boone, J. J. Krajewski,
A. M. Sergent, and J. M. Rosamilia, Appl. Phys.
Lett., 77, 130, (2000).
- "Properties of Ga2O3(Gd2O3)/GaN
MIS Diodes”, M. Hong, K. A. Anselm, J. P. Mannaerts,
J. Kwo, A. Y. Cho, A. R. Kortan, C. M. Lee*,
J. I. Chyi*, and T. S. Lay, 18th NAMBE
and J. Vac. Sci. Technol. B18, 1453, (2000).
- "Extended x-ray Absorption Fine Structure
Measurement of Bond-Length Strain in Epitaxial
Gd2O3 on GaAs (001)”,
E. J. Nelson, J. C. Woicik, M. Hong, J. Kwo,
and J. P. Mannaerts, Appl. Phys. Lett, 76,
2526, (2000).
- "Defect Dominated Charge Transport in Amorphous
Ta2O5 Thin Films” R.
M. Fleming, D. V. Lang, C. D. W. Jones, M.
L. Steigerwald, D. W. Murphy, G. B. Alers,
Y. H. Wong, R. B. van Dover, J. Kwo, and A.
M. Sergent, J. Appl. Phys, 88, 850, (2000).
- "Insulator/GaN heterostructures of low interfacial
density of states”, M. Hong, H. M. Ng, J. Kwo,
A. R. Kortan, J. N. Baillargeon, K. A. Anselm,
J. P. Mannaerts, A. Y. Cho, C. M. Lee, J. I.
Chyi, T. S. Lay, F. Ren, C. R. Abernathy, and
S. J. Pearton, in MRS Conf. Proc."Wide bandgap
electronic devices” Ed. by R. J. Shul, W. Pletschen,
F. Ren, and M. Murakami, 2000.
- "GaAs MOSFET – Achievements and challenges”,
M. Hong, Y. C. Wang, F. Ren, J. P. Mannaerts,
J. Kwo, A. R. Kortan, J. N. Baillargeon, and
A. Y. Cho,"Compound semiconductor power transistors
II and state-of-the-art porgram on compound
semiconductors (SOTAPOCS XXXII), Ed. by R.
Kopf, A. G. Baca, and S. N. G. Chu ECS Proc.
volume 2000-1, p202.
- "Low Dit Dielectric/GaN MOS Systems”,
M. Hong, H. M. Ng, J. Kwo, A. R. Kortan, J.
N. Baillargeon, S. N. G. Chu, J. P. Mannaerts,
A. Y. Cho, F. Ren, C. R. Abernathy, S. J. Pearton,
and J. I. Chyi, in "Compound semiconductor
power transistors II and state-of-the-art program
on compound semiconductors (SOTAPOCS XXXII),
Ed. by R. Kopf, A. G. Baca, and S. N. G. Chu
ECS Proc. volume 2000-1, p. 103.
- "Charge Transport in Anodized Ta2O5 Thin
Films”, C. D. W. Jones, R. M. Fleming, D. V.
Lang, M. L. Steigerwald, D. W. Murphy, B. Vyas,
G. B. Alers, Y. H. Wong, R. B. van Dover, J.
Kwo, A. M. Sergent, 197th Electrochemical
Society Meeting, Toronto, Ontario, Canada,
May 14-19, (2000).
- "The Structural Modifications of the Gd2O3 (110)
Films on GaAs (100)”, C. Steiner, B. Bolliger,
M. Erbudak, M. Hong, A. R. Kortan, J. Kwo,
and J. P. Mannaerts, Phys. Rev. B rapid communications,
Phys. Rev. B 62, R10, 614, (2000).
- "Structure of the fluorite related Gd2O3 film
on GaAs (100)”, A. R. Kortan, M. Hong, J. Kwo,
J. P. Mannaerts, J. J. Krajewski, N. Kopylov,
C. Steiner, B. Bolliger, and M. Erbudak, submitted
to Phys. Rev. B, 2000.
- "GaAs MOSFET – Material Physics and Devices”,
M. Hong, and J. Kwo, A. R. Kortan, J. P. Mannaerts,
Y. C. Wang, and T. S. Lay, Proc. of the 8th
Asia-Pacific Physics Conference, p. 3, Ed.
by Y.-D. Yao et al, World Scientific publishing
Co. Singapore, 2000.
- "Single Crystal Rare Earth Oxides on GaN”,
M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts,
C. M. Lee, and J. I. Chyi, submitted to Appl.
Phys. Lett. 2000.
- "Properties of High k Gate Dielectrics Gd2O3 and
Y2O3 for Si”, J. Kwo,
M. Hong, A. R. Kortan, K. L. Queeney, Y. J.
Chabal, R. L. Opila, Jr., D. A. Muller, S.
N. G. Chu, B. J. Sapjeta, T. S. Laya),
J. P. Mannaerts, T. Boone, H. W. Krautter,
J. J. Krajewski, A. M. Sergent, and J. M. Rosamilia,
J. Appl. Phys, 89, 3920, 2001.
- "First demonstration of GaAs CMOS”, J. N.
Baillargeon, M. Hong, J. P. Mannaerts, J. Kwo,
C. T. Liu, and A. Y. Cho, in 2000 IEEE International
Symposium on Compound Semiconductors, IEEE
publication series 00TH8498, p.345-350.
- "Single crystal rare earth oxides epitaxially
grown on GaN" by M. Hong, A. R. Kortan, J.
Kwo, J. P. Mannaerts, C. M. Lee, and J. I.Chyi,
in 2000 IEEE International Symposium on Compound
Semiconductors, IEEE publication series 00TH8498,
p.495.
- "New Phase Formation of Gd2O3 films
on GaAs (100)”, A. R. Kortan, M. Hong, J. Kwo,
J. P. Mannaerts, J. J. Krajewski, N. Kopylov,
C. Steiner, B. Bolliger, and M. Erbudak, J.
Vac. Sci. Technol. B. 19 (4), 1434, (2001).
- "Interface Reactions of High-k Y2O3 Gate
Oxides With Si”, B. W. Busch, J. Kwo, M. Hong,
J. P. Mannaerts, and B. J. Sapjeta, W. H. Schulte,
E. Garfunkel, and T. Gustafsson, Appl. Phys.
Lett, 79, 2447 (2001).
- "Probing the microscopic compositions at
Ga2O3(Gd2O3)/GaAs
interface by core level photoelectron spectroscopy”,
T. S. Lay, K. H. Huang, W. H. Hung, M. Hong,
J. Kwo, and J. P. Mannaerts, Solid State Electronics,
45, pp. 423-426, 2001.
- "C-V and G-V characterization of Ga2O3(Gd2O3)/GaN
capacitor with low interface state density”,
T. S. Lay, W. D. Liu, M. Hong, J. Kwo, and
J. P. Mannaerts, Electronics Letters, Vol.
37, No. 9, 595 (2001).
- "Energy-band parameters at the GaAs- and
GaN-Ga2O3(Gd2O3)
interfaces”, T. S. Lay, M. Hong, J. Kwo, J.
P. Mannaerts, W. H. Hung, and D. J. Huang,
Solid State Electronics, 2001.
- "A Comparison of Gallium Gadolinium Oxide and Gadolinium Oxide for use as Dielectrics in GaN MOSFET”, B. P. Gila, K. N. Lee, W. Johnson, F. Ren, C. R. Abernathy, S. J. Pearton, M. Hong, J. Kwo, J. P. Mannaerts and K. A. Anselm, (invited talk) p.182-91, Proceedings (ISBN: 0-7803-6381-7) 2000 IEEE/Cornell Conference on High Performance Devices, Ithaca, NY, USA, 7-9, Aug. 2000. Sponsors: IEEE Electron Dev. Soc., IEEE Microwave Theory & Tech. Soc., School of EE., Cornell U.
- "Medium energy ion scattering studies of
the thermal evolution of alternative gate dielectric
thin films”,D. Starodub, B.W. Busch, J. Kwo,
T. Nishimura, S. Sayan, W.H. Schulte, T. Gustafsson
and E. Garfunkel, Conf. Proc. of High k Dielectrics,
Brazil, Sep., 2001.
- "High κ gate dielectrics for the silicon
industry” L. Manchanda, B. Busch, M. L. Green,
M. Morris, R. B. van Dover, R. Cow, and S.
Aravamudhan, IWGI 2001 Extended Abstracts of
International Workshop on Gate Insulator, 2001,
Page(s): 56 –60.
- "Interface reactions of high-k Y2O3 gate
oxides with Si”, B. W. Busch, J. Kwo, M. Hong,
J. P. Mannaerts, B. J. Sapjeta, W. H. Schulte*,
E. Garfunkel*, and T. Gustafsson*, Conf. Proc.
of the 2001 IEEE Semiconductor Interface Specialists
Conference (SISC), Washington D.C., Nov. 28
– Dec. 1, 2001.
- "Single crystal GaN/Gd2O3/GaN heterostructure”, M. Hong, A. R. Kortan, H. M. Ng, J. Kwo, S. N. G. Chu, J. P. Mannaerts, A. Y. Cho, C. M. Lee, J. I. Chyi, and K. A. Anselm, J. Vac. Sci. Technol. B 20(3), 1274, (2002).
- "Materials Characterization of Alternative Gate Dielectrics”, B.W. Busch, O. Pluchery, Y.J. Chabal, D.A. Muller, R.L. Opila, J.R. Kwo, and E. Garfunkel, in "Alternative Gate Dielectrics for Microelectronics”, Ed. By G. Wilk, and R. Wallace, Materials Research Bulletin, Vol. 27, No. 3, p.206-211, (2002).
- "Electrical characteristics of ultrathin Pt/Y2O3/Si capacitor with rapid post-metallization annealing”, T. S. Lay, W. D. Liu, J. Kwo, M. Hong, and J. P. Mannaerts, IEE Electronics Letters 38, No. 24, p. 1594-1596, (2002).
- "GaN/Gd2O3/GaN Single Crystal Heterostructure”, M. Hong, J. Kwo, S. N. G. Chu, J. P. Mannaerts, and G. Dabbagh, A. R. Kortan, H. M. Ng, A. Y. Cho, and K. A. Anselm, C. M. Lee, and J. I. Chyi, Electrochemical Society Proceedings, Volume 2002-3, p. 36-45.
- "Advances in High κ Gate Dielectrics for Si and III-V Semiconductors”, J. Kwo, M. Hong, B. Busch, D. A. Muller*, Y. J. Chabal, A. R. Kortan*, J. P. Mannaerts, B. Yang, P. Ye, H. Gossmann, A. M. Sergent, K. K. Ng, J. Bude, W. H. Schulte, E. Garfunkel, and T. Gustafsson, J. Crystal Growth, 251, 645, (2003).
- "High κ Gate Dielectrics For Si And Compound Semiconductors By MBE”, J. Kwo and M. Hong, MRS Proceedings Vol. 745, Symposium of "Novel Materials and Processes for Advanced CMOS”, edited by Mark I. Gardner, Stefan De Gendt, Jon-Paul Maria, and Susanne Stemmer, p. 311, (2003).
- "Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga2O3 (Gd2O3) as gate dielectric”, B. Yang, P. Ye, J. Kwo, M. Frei, H. Gossmann, J. P. Mannaerts, M. Sergent, M. Hong, K. Ng, and J. Bude, J. Crystal Growth, 251, 837, (2003).
- "DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga2O3/Gd2O3 layer (74Å) as gate dielectric”, B. Yang, P. D. Ye, J. Kwo, M. R. Frei, H. J. Gossmann, J. P. Mannaerts, M. Sergent, M. Hong, K. Ng, and J. Bude, 2002 IEEE GaAs Digest, p. 139, (2002).
- "GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition”, P. D. Ye, G. D. Wilk, J. Kwo, B. Yang, H.-J.L. Gossmann, M. R. Frei, S. N. G. Chu, J. P. Mannaerts, M. Sergent, M. Hong, K. Ng, and J. Bude, IEEE Electron Device Letters 24, No.4, 209, (2003).
- "GaAs MOSFET with nm-thin dielectric grown by atomic layer deposition”, P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, S. N. G. Chu, S. Nakahara, H.-J. L. Gossmann, J. P. Mannaerts, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett. 83, 180, (2003).
- "Optimization of AuGe/Ni/Au ohmic contacts for GaAs MOSFETs”, H. C. Lin, S. Senanayake, and K. Y. Cheng, M. Hong, J. Kwo, B. Yang, and J. P. Mannaerts, IEEE Trans. Electron Dev., 50, no. 4, 880, (2003).
- "Schottky Barrier Height and Interfacial
State Density on Oxide-GaAs Interface”, J.
S. Hwang, M. F. Chen, C. C. Chang, M. F. Chen,
C. C. Chen, K. I. Lin, F. C. Tang, M. Hong,
and J. Kwo, J. Appl. Phys. 94, 348, (2003).
- "Rapid post-metallization annealing effects on high-κ Y2O3/Si capacitor”, T. S. Lay , Y. Y. Liao, W. D. Liu, Y. H. Lai, W. H. Hung, J. Kwo, M. Hong, J. P. Mannaerts, Solid State Electronics 47, 1021-1025 Jun (2003) (SCI: 1.008)
- "Depletion Mode InGaAs Metal Oxide Semiconductor
Field Effect Transistor with Gate Oxide Dielectrics
Grown by Atomic Layer Deposition ", P.D. Ye,
G. D. Wilk, B. Yang, J. Kwo, H. J. L. Gosserman,
M. Hong, K. K.Ng, and J. Bude, Appl. Phys.
Lett., 84, 434, (2004).
- "GaAs-based metal-oxide-semiconductor field-effect-transistors
with Al2O3 gate dielectrics
grown by atomic layer deposition”, P. D. Ye,
G. D. Wilk, B. Yang, J. Kwo, H. J. L. Gossmann,
M. Frei, J. P. Mannaerts, M. Sergent, M. Hong,
K. K. Ng, and J. Bude, J. Electron. Mater.
33, 912, (2004).
- "Structures of Sc2O3 films
epitaxially grown on α-Al2O3 (111)”,
A. R. Kortan, M. Hong, J. Kwo, P. Chang, C.
P. Chen, J. P. Mannaerts, and S. H. Liou in
Integration of Advanced Micro- and Nanoelectronic
Devices—Critical Issues and Solutions, edited
by J. Morais, D. Kumar, M. Houssa, R.K. Singh,
D. Landheer, R. Ramesh, R.M. Wallace, S. Guha,
and H. Koinuma (Mater. Res. Soc. Symp. Proc.
811, Warrendale, PA , 2004), p. E1.2.
- "Epitaxial Growth and Structure of Thin Single
Crystal gγ-Al2O3 Films
on Si (111) Using e-Beam Evaporation of Sapphire
in Ultra-High Vacuum”, M. Hong, A. R. Kortan,
J. Kwo, J. P. Mannaerts, and S. Y. Wu, in Integration
of Advanced Micro- and Nanoelectronic Devices—Critical
Issues and Solutions, edited by J. Morais,
D. Kumar, M. Houssa, R.K. Singh, D. Landheer,
R. Ramesh, R.M. Wallace, S. Guha, and H. Koinuma
(Mater. Res. Soc. Symp. Proc. 811, Warrendale,
PA , 2004), p. D9.5.
- "Fundamental study and oxide reliability
of the MBE grown Ga2-xGdxO3 dielectrics
for compound semiconductor MOSFET’s”, J. Kwo,
M. Hong, J. P. Mannaerts, Y. D. Wu, Q. Y. Lee,
B. Yang, and T. Gustafsson, in Integration
of Advanced Micro- and Nanoelectronic Devices—Critical
Issues and Solutions, edited by J. Morais,
D. Kumar, M. Houssa, R.K. Singh, D. Landheer,
R. Ramesh, R.M. Wallace, S. Guha, and H. Koinuma
(Mater. Res. Soc. Symp. Proc. 811, Warrendale,
PA , 2004), p. E1.12.
- "Structure of S2O3 films
epitaxially grown on α-Al2O3 (111)”,
A. R. Kortan, M. Hong, J. Kwo, J. P. Mannaerts,
S. H. Liou, and N. submitted to Phys. Rev.
B. (2004).
- "High-quality thin single crystal γ-Al2O3 films
grown on Si (111)”, S. Y. Wu, M. Hong, A. R.
Kortan, J. Kwo, "Tailoring Oxide-Semiconductor
Interfaces – an enabling sub-nano approach
for new science and next-generation high speed
and high power devices” (氧化物-半導體界面控制 – 次奈米尺寸新興科學解決方案及次世代高速操作高功率元件),
in Taiwan Nanotechnology (台灣奈米科技 – 從 2004 到嚮往的大未來),
published by Nano-technology center of Industrial
Technology Research Institute, Hsin Chu, Taiwan,
2004.
- "High κ Gate Dielectrics for Si Nano Electronics”,
J. Raynien Kwo, to appear in第一屆台灣分子束磊晶科技研討會,真空科技,
National Sun Yat-Sen University, Kaohsiung,
Taiwan, April 29-30, 2004.
- "The Quest for the Compound Semiconductor
MOSFET – Technology beyond Si/SiO2 MOS”,
M. Hong and J. Kwo, Plenary talk at MBE TAIWAN
2004, 第一屆台灣分子束磊晶科技研討會,真空科技, National Sun Yat-Sen
University, Kaohsiung, Taiwan, April 29-30,
2004.
- "Towards GaAs MOSFET – MBE Growth, Processing,
and Characterization”, P. J. Tsai, Y. W. Chen,
H. P. Yang, P. Chang, M. Hong, J. Kwo, J. Chi,
and J. P. Mannaerts, 第一屆台灣分子束磊晶科技研討會,真空科技,
National Sun Yat-Sen University, Kaohsiung,
Taiwan, April 29-30, 2004.
- "Single Crystal γ-Al2O3 Films
on Si (111) – Epitaxial Growth, Structural,
and Electrical Properties” S. Y. Wu, M. Hong,
A. R. Kortan, J. Kwo, and J. P. Mannaerts,
第一屆台灣分子束磊晶科技研討會, 真空科技, National Sun Yat-Sen
University, Kaohsiung, Taiwan, April 29-30,
2004.
- "MBE Grown HighκGate Dielectrics of HfO2 and
(Hf-Al)O2 for Si and III-V Semiconductors
Nano-electronics”, W. G. Lee, Y. J. Lee, Y.
D. Wu, P. Chang, Y. L. Hsu, C. P. Chen, J.
P. Mannaerts , S. Maikap, C. W. Liu, L. S.
Lee, W. Y. Hsieh, M. J. Tsai, S. Y. Lin, R.
L. Lo, M. Hong and J. Kwo, 第一屆台灣分子束磊晶科技研討會,真空科技,
National Sun Yat-Sen University, Kaohsiung,
Taiwan, April 29-30, 2004.
- "Demonstration of Atomically Abrupt Interface
of HfO2 High κ Gate Dielectrics
with Si for Nano CMOS”, Wei-Jin Lee, Yi-Jun
Li, Ya-Ling Hsu, Kuen-Yu Lee, Chi-Hsin Chu,
Chien-Chung Huang, Y. L. Huang, T. Gustafsson,
E. Garfunkel, Sidhu Maikap, L. S. Lee, Shi-Yen
Lin, Minghwei Hong, and Raynien Kwo, extended
abstract in the proceeding of the Taiwan International
Conference on Nano science, June 30-July3,
2004.
- "Recent Advances in High κfor Nano CMOS”,
J. Kwo, extended abstract in the proceeding
of the Taiwan International Conference on Nano
science, June 30-July3, 2004.
- "Tailoring Oxide-Semiconductor Interfaces
– an Enabling Sub-nano Approach for New Science
and Advanced Devices” , M. Hong and J. Kwo,
extended abstract in the proceeding of the
Taiwan International Conference on nano science,
June 30-July 3, 2004.
- "MBE Grown HfO2 High κ Gate Dielectrics for Si Nano CMOS”, Wei-Jin Lee, Yi-Jun Lee, Chi-Hsin Chu, Kuen Yu Lee,,, Kuo-Liang Chaw, Ya-Ling Hsu, Ching Han Pan, F. R. Chen, T. Gustafsson, E. Garfunkel, Sidhu Maikap, L. S. Lee, Minghwei Hong, and J. Raynien Kwo, submitted to IUMRS, 2004, Nov 16-18, 2004, ITRI, Hsin Chu.
- "Synthesis of HfO2 High κ Gate Dielectrics by Sputter Deposition”, Yen-Dar Wu, Chien-Chung Huang, Yi-Jun Lee, Ya-Ling Hsu, Chi-Hsin Chu, Kuo-Liang Jaw, Wei-Jin Lee, Ching Han Pan, F. R. Chen, T. Gustafsson5, E. Garfunkel5, Sidhu Maikap6, L. S. Lee6, Minghwei Hong1, and J. Raynien Kwo, submitted to IUMRS, 2004, Nov 16-18, 2004, ITRI, Hsin Chu.
- "HfO2 and Sc2O3 High κ Dielectrics for GaAs Compound Semiconductor Passivation”, Hsiang-Bie Chang, Wei-Jin Lee, Yi-Lin Huang, Chieh-Ping Chen, Yi-Jun Lee, Ya-Ling Hsu2 T. Gustafsson, E. Garfunke3, Minghwei Hong, and J. Raynien Kwo, submitted to IUMRS, 2004, Nov 16-18, 2004, ITRI, Hsin Chu.
- "Towards GaAs MOSFET: MBE Growth, Processing, Characterization, and Analysis”, K. Jaw, P. J. Tsai, Y. W. Chen, H. P. Yang, P. Chang, J. P. Mannearts, J. Chi, J. R. Kwo, and M. Hong, submitted to IUMRS, 2004, Nov 16-18, 2004, ITRI, Hsin Chu
- "原子尺寸下氧化物與半導體界面的剪裁控制: 一個在次奈米尺寸底下新穎科學的發現及對次世代高功能元件製造的解決方案”, 洪銘輝和郭瑞年, 國立清華大學; "Tailoring Oxide-Semiconductor Interfaces – an Enabling Sub-nano Approach for New Science and Advanced Devices”, M. Hong and J. Kwo, to appear in the Electronics Spectrum, the News Lettter of Electron Devices and Materials Association, Taiwain, Ed. Y. H. Wang, vol 10, no. 2, (2004).
- "MBE Grown High κ Gate Dielectrics of HfO2 and (Hf-Al)O2 for Si and III-V Semiconductors Nano-electronics, W. G. Lee, Y. J. Lee, Y. D. Wu, P. Chang, Y. L. Hsu, C. P. Chen, J. P. Mannaerts , S. Maikap, C. W. Liu, L. S. Lee, M. J. Tsai, S. Y. Lin, T. Gustffson, M. Hong, and J. Kwo, J. Crystal Growth, 278, 619-623, (2005).
- "Epitaxial Growth and Structure of Thin Single Crystal Sc2 O3 Films on Si (111)”, C .P. Chen, M. Hong, J. Kwo, H.-M. Cheng, Y. L. Hwang, S. Y. Lin, J. Chi, H.-Y. Lee, and J. P. Mannaerts, J. Crystal Growth, 278, 638-642, (2005).
- "Depth Profile Study of the Electronic Structures at Ga2O3(Gd2O3) and Gd2O3/GaN interfaces by x-ray photoelectron spectroscopy. ", T. S. Lay, Y. Y. Liao, W. H. Hung, M.Hong, J. Kwo, and J. P. Mannaerts, 2004 International MBE conference proceeding, J. Crystal Growth, 278, 624-628, (2005).
- "Depth-profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy”, T. S. Lay, S. C. Chang, C. C. Yeh, W. H. Hung, J. Kwo and M. Hong, J. Vac. Sci. & Technol. 23(3), 1291-1293, (2005).
- "Thermodynamic stability of Ga2O3 (Gd2O3)/GaAs Interface at High Temperatures”, Y. L. Huang, P. Chang, Z. K. Yang, Y. J. Lee, H. Y. Lee, H. J. Liu, J. Kwo, J. P. Mannaerts, and M. Hong, Appl. Phys. Lett. 86, 191905, (2005).
- "High-quality Nano-thick Single Crystal γ-Al2O3 Films Grown on Si (111)”, S. Y. Wu, M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts, W. G. Lee, and Y. L. Huang, Appl. Phys. Lett. 87, 091908, (2005).
- "High-quality Thin Single Crystal Sc2O3 Films Grown on Si (111)”, M. Hong, A. R. Kortan, P. Chang, C. P. Chen, Y. L. Huang, H. Y. Chou, H. Y. Lee, J. Kwo, M.-W. Chu, C. H. Chen, L. Goncharova, E. Garfunkel, and T. Gustafsson, Appl. Phys. Lett. 87, 251902, (2005).
- "Surface Passivation of III-V Compound Semiconductors Using Atomic-layer-deposition Grown Al2O3”, M. L. Huang, Y. C. Chang, C. H. Chang, Y. J. Lee, and P. Chang, J. Kwo, T. B. Wu and M. Hong , Appl. Phys. Lett. 87, 252104, (2005).
- "Depletion-mode InGaAs/GaAs MOSFET with oxide passivated by amorphous Si”, P. J. Tsai, U. N. Chiu, L. K. Chu, Y. W. Chen, H. P. Yang, P. Chang, J. Kwo, J. Chi, and M. Hong, Journal of Taiwan Vacuum Society vol. 18, No. 3, 4, (2005).
- "Advances in High κ Gate Oxides for Si and Compound Semiconductor Nanoelectronics”, J. Kwo, and M. Hong, in the extended abstract in the Conference Proceeding of the Bio-Nano-InFo-Fusion Conference, July 20-22, (2005).
- "Advanced high κ dielectrics for nano-electronics – science and technologies”, M. Hong and J. Kwo, invited talk at 208th ECS, and a book chapter in the conf. proceedings, (2005).
- " Structure, Composition and Order at Interfaces of Crystalline Oxides and Other High κ Materials on Si ”, T. Gustafsson, R. Garfunkel, L. Goncharova, D. Starodub, R. Barnes, M. Dalponte, G. Bersuker, B. Fordan, D. G. Sholom, V. Vaithyanathan, M.Hong, and J. Kwo, in"Defects in Advanced High k Dielectric Nano-electronic Semiconductor Device”, Ed. E.P. Gusev, Springer, Netherlands, (2005).
- "High κ Gate Dielectrics for Compound Semiconductors, by J. Kwo and M. Hong , in "ADVANCED GATE STACKS ON HIGH-MOBILITY SEMICONDUCTORS”, edited by A. Dimoulas, E. Gusev, P. McIntyre, M. Heyns, Springer publishing company in the Springer Series Materials Science, (2006).
- "Structure of Sc2O3 films epitaxially grown on α-Al2O3 (0001), A. R. Kortan*, N. Kopylov, J. Kwo, M. Hong*, C. P. Chen, J. P. Mannaerts, and S. H. Liou, Appl. Phys. Lett. 88, 021906, (2006).
- "Scanning Atomic Force Microscopic Nanolithography on Hafnium Oxide Thin Film Grown on Si (100)”, Rong-Li Lo*, W.-C. Lee and J. Kwo, Jpn. J. Appl. Phys. 45, 2067, (2006).
- "Energy-band parameters of atomic-layer-deposition-Al2O3/InGaAs heterostructures”, M. L. Huang, Y. C. Chang, C. H. Chang, T. D. Lin, J. Kwo, T. B. Wu, and M. Hong*, Appl. Phys. Lett. 89, 012903, (2006).
- "Structural and electrical studies of Ga2O3(Gd2O3)/GaAs under high temperature annealing”, C. P. Chen, Y. J. Lee, Y. C. Chang, Z. K. Yang, M. Hong*, J. Kwo, H. Y. Lee, and T. S. Lay, J. Appl. Phys. 100, 104502, (2006).
- "Structure of HfO2 films epitaxially grown on GaAs (001)”, C. H. Hsu, P. Chang, Z. K. Yang, Y. J. Lee, M. Hong, J. Kwo*, C. M. Huang, and H. Y. Lee, Appl. Phys. Lett. 89, 122907, (2006).
- "A molecular beam epitaxy grown template for subsequent atomic layer deposition of high κ dielectrics”, K. Y. Lee, W. C. Lee, Y. J. Lee, M. L. Huang, C. H. Chang, T. B. Wu, M. Hong, and J. Kwo*, Appl. Phys. Lett. 89, 222906, (2006).
- "Interfacial self-cleaning of atomic layer deposition of HfO2 gate dielectrics on In0.15Ga0.85As”, C. H. Chang, Y. K. Chiu, Y. C. Chang, K. Y. Lee, T. D. Lin, T. B. Wu*, M. Hong, and J. Kwo, Appl. Phys. Lett. 89, 242911 (2006).
- "A novel approach of using a MBE template for ALD growth of high κ dielectrics”, K. Y. Lee, W. C. Lee, M. L. Huang,, C. H. Chang, Y. J. Lee, Y. K. Chiu, T. B. Wu, M. Hong and J. Kwo*, Journal of Crystal growth, 301-302, 378-380, (2007).
- "MBE Grown High-Quality Gd2O3/ Si (111) Heterostructure”, T. D. Lin, M. C. Hang, P. Chang, W. C. Lee, Z. K. Yang, H. Niu, C. H. Hsu, J. Kwo, and M. Hong*, Journal of Crystal growth, 301-302, 386-389, (2007).
- "MBE grown high κ dielectrics of Ga2O3(Gd2O3) for GaN”, Y. C. Chang, Y. N. Chiu, S. Y. Wu, H. C. Chiu, P. Chang, Y. J. Lee, J. Kwo, Y. H. Wang, and M. Hong*, Journal of Crystal growth, 301-302, 390-393, (2007).
- "Structural and Magnetic properties of Epitaxial Fe3Si/GaAs Heterostructures”, Y. L. Hsu, M. L. Huang, Y. N. Chiu, C. C. Ho, P. Chang, C. H. Hsu, M. Hong and J. Kwo*, Journal of Crystal growth, 301-302, 588-591, (2007).
- "Interfacial trap characteristics in depletion mode GaAs MOSFETs”, T. C. Lee, C. Y. Chan, P. J. Tsai, Shawn S. H. Hsu, J. Kwo, M. Hong*, Journal of Crystal growth, 301-302, 1009-1012, (2007)
- "Depletion mode GaAs-based MOSFET with Ga2O3(Gd2O3) as a gate dielectric”, P. J. Tsai, L. K. Chu, Y. W. Chen, U. N. Chiu, H. P. Yang, P. Chang, J. Kwo, J. Chi, and M. Hong*, Journal of Crystal growth, 301-302, 1013-1016, (2007).
- "Defining new frontiers in electronic devices with high κ dielectrics and interfacial engineering”, M. Hong*, W. C. Lee, M. L. Huang, Y. C. Chang, T. D. Lin, Y. J. Lee, J. Kwo, C. H. Hsu and H. Y. Lee, Thin Solid Films, 515, 5581 (2007).
- "III-V MOSFET’s with High κ Dielectrics”, M. Hong, J. Kwo, P. J. Tsai , Y. C. Chang, M. L. Huang , C. P. Chen, and T. D. Lin, Japan, Jpn. J. Appl. Phys. 46, 5B, 3167 (2007).
- "Advance in Next Century Nano CMOSFET Research and Its Future Prospects for Industry”, Huey-liang Hwang, Yan-Kai Chiou, Che-Hao Chang, Chen-Chan Wang, Kun-Yu Lee, Tai-Bor Wu, J. Kwo, and Minghwei Hong, Kuei-Shu Chang-Liao, Chun-Yuan Lu, Chun-Chang Lu, Yin Yin Kyi, Albert Chin, Chun-Heng Chen, Joseph Ya-min Lee, and Fu-Chien Chiu, Conf. Proc. Journal Vacuum Science Technology, Nov. (2007).
- "Effect of Al incorporation in the thermal stability of atomic-layer-deposited HfO2 for gate dielectric applications”, Yan-Kai Chiou, Che-Hao Chang, Chen-Chan Wang, Kun-Yu Lee, Tai-Bor Wu, J. Kwo and Minghwei Hong, Journal of The Electrochemical Society, 154 (4) G99-G102 (2007).
- "Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) with high dielectric constant”, Z. K. Yang, Y. J. Lee, W. C. Lee, P. Chang, M. L. Huang, and M. Hong, C.-H. Hsu, J. Kwo*, Appl. Phys. Lett. 90, 152908 (2007).
- "Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111)”, Z. K. Yang, Y. J. Lee, W. C. Lee, P. Chang, M. L. Huanga), M. Hong, K. L. Yu, M.-T. Tang, and C.-H. Hsu*, and J. Kwo*, Appl. Phys. Lett, 91, 202909 (2007)..
- "Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN”, Y. C. Chang, H. C. Chiu, Y. J. Lee, M. L. Huang, K. Y. Lee, and M. Hong*, Y. N. Chiu, J. Kwo, and Y. H. Wang, Appl. Phys. Lett. 90, 232904 (2007).
- "Observation of room temperature ferromagnetic behavior in cluster free in Co doped HfO2 films”, Y. H. Chang, Y. L. Soo, S. F. Lee, W. C. Lee, M. L. Huang, Y. J. Lee, S. C. Weng, W. H. Sun, J. M. Ablett, C-. C. Kao, M. Hong, and J. Kwo*,
Appl. Phys. Lett. 91, 082504 (2007).
- "Local environment Surrounding Co in MBE-grown Co-doped HfO2 thin films probed by extended x-ray absorption fine structure”, Y. L. Soo, S. C. Weng, W. H. Sun, S. L. Chang, W. C. Lee, Y. S. Chang, J. Kwo, M. Hong, J. M. Ablett, C-. C. Kao, D. G. Liu, and J. F. Lee, Phys. Rev. B. Brief Report, 76, 132404 (2007).
- "Time
dependent preferential sputtering in the
HfO2 layer on Si”, S. J. Chang, W. C. Lee,
J. C. Huang*, M. Hong, and J. Kwo, Thin
Solid Films, 516, 948 (2008).
- "Inelastic electron tunneling
spectroscopy study of
metal-oxide-semiconductor device with high-κ
gate dielectrics”, S. L. You,C. C. Huang, H.
C. Ho, J Kwo*, W. C. Lee and M. Hong, Appl.
Phys. Lett. 92,012113 (2008).
- "Transmission Electron Microscopy
Characterization of HfO2/GaAs
Heterostructures Grown by Molecular Beam
Epitaxy”, S. C. Liou, M.W. Chu*, C. H. Chen,
Y. J. Lee, P. Chang, W. C. Lee, Z. K. Yang,
M. Hong, J.Kwo, Applied Physics A-materials
science and processing, 91, 585, (2008).
- "Nano-meter thick Y2O3 films grown on Si
(111) approaching a structural perfection”,
C. W. Nieh, Y. J. Lee, W. C. Lee, Z. K.
Yang, A. R.Kortan, M. Hong*, J. Kwo, and C.
H. Hsu*, Appl. Phys. Lett, 92, 061914
(2008).
- "Atomic-layer-deposited HfO2 on
In0.53Ga0.47As – passivation and energy-band
parameters”, Y. C. Chang, M. L. Huang, K. Y.
Lee, Y. J. Lee,T. D. Lin, M. Hong *, J. Kwo*
, T. S. Lay, C. C. Liao and K. Y.
Cheng,Appl. Phys. Lett, 92, 072901 (2008).
（Cited：18, SCI：3.726）
- "Si metal-oxide-semiconductor devices
with high κ dielectrics fabricated using a
novel MBE template approach followed by
atomic layer deposition”, C. H. Pan, J. Kwo*,
K. Y. Lee, W. C. Lee, L. K. Chu, M. L.Huang,
Y. J. Lee, and M. Hong, JVST 2008, 25th
North American Molecular Beam Epitaxy
Conference, Albuquerque, New Mexico, USA,
September 23-26, 2007,Conf. Proc in J. Vacu.
Scien. Tech. 26, 1178, (2008).
- "Growth and Structural Characteristics
of GaN/AlN/nano thick g-Al2O3/Si (111) ”, W.
C. Lee, Y. J. Lee, L. T. Tung, S. Y. Wu, C.
H. Lee,M. Hong*, H. M. Ng, J. Kwo, and C. H.
Hsu, JVST 2008, 25th North American
Molecular Beam Epitaxy Conference,
Albuquerque, New Mexico, USA,September
23-26, 2007, Conf. Proc. in J. Vacu. Scien.
Tech. 26, 1064, (2008).
- "High-quality nano thick single crystal Y2O3
films epitaxially grown on Si (111) – growth
and structural characteristics”, Y.J. Lee,
W. C. Lee, C. W. Nieh, Z. K. Yang, A. R.
Kortan, M. Hong*, J. Kwo,and C.-H. Hsu, JVST
2008. 25th North American Molecular Beam
Epitaxy Conference, Albuquerque, New Mexico,
USA, September 23-26, 2007. Conf. Proc.in J.
Vacu. Scien. Tech. 26, 1124 (2008).
- "Oxide scalability in Ga2O3(Gd2O3)/In
0.2Ga0.80As/GaAs hetero-structures”, K. H.
Shiu, C. H. Chiang, Y. J. Lee, W. C. Lee,
P.Chang, L. T. Tung, M. Hong* , J. Kwo, and
W. Tsai, JVST 2008. 25th North
American Molecular Beam Epitaxy Conference,
Albuquerque, New Mexico, USA,September
23-26, 2007, Conf. Proc. to be published in
J. Vacu. Scien. Tech.26, 1132, (2008).
- "Molecular beam epitaxy grown Ga2O3
(Gd2O3) high-κ dielectrics for m Germanium passivation-x-ray photoelectron spectroscopy
(XPS) and
electrical characteristics”, C. H. Lee, T. D
Lin, K. Y. Lee, L. T. Tung, Y.
C. Chang, M. L. Huang, M. Hong*, and J. Kwo,
JVST 2008, 25th North American
Molecular Beam Epitaxy Conference,
Albuquerque, New Mexico,USA,September 23-26,
2007, Conf. Proc. in J. Vacu. Scien. Tech.
26, 1128, (2008).
- "Correlation between Crystal Structure
and Photoluminescence forEpitaxial ZnO on Si
(111) using a g-Al2O3
Buffer Layer”, W.-R. Liu, Y.-H.Li, and W. F.
Hsieh*, C.-H. Hsu*, W. C. Lee, M. Hong, J.
Kwo, J. Physics,D-APPLIED PHYSICS, 41,
065105, (2008).
- "1nm equivalent oxide thickness in Ga2O3
(Gd2O3) / In0.2Ga0.8As
metal-oxide-semiconductor capacitors”, K. H. Shiu, T. H. Chiang, P. Chang,L. T. Tung, W.
Tsai, J. Kwo*, and M. Hong*, Applied Phys.
Letters, 92,172904, (2008).
- "Achieving one nanometer capacitive
effective thickness in atomic layer
deposited HfO2 on In0.53Ga0.47As,” K. Y.
Lee, Y. J. Lee, P.Chang, M. L. Huang, Y. C.
Chang, M. Hong*, and J. Kwo*, Appl. Phys.
Letters,92, 252908, (2008).
- "High-performance self-aligned
inversion-channel In0.53Ga0.47As
metal-oxide- semiconductor field effect
transistor with Al2O3/Ga2O3(Gd2O3) as gate
dielectrics”, T. D. Lin, H. C. Chiu, P.
Chang, L. T. Tung, C. P.Chen, M. Hong*, J.
Kwo*, Y. C. Wang, and W. Tsai, Appl. Phys.
Lett, 93,033516, (2008).
- "Inversion-channel GaN nMOSFET with
atomic-layer-deposited Al2O3 as gate
dielectric”, Y. C. Chang, W. H. Chang, H. C.
Chiu, L. T. Tung, C. H.Lee, K. H. Shiu, M.
Hong*, and J. Kwo*, Appl. Phys. Lett, 93,
053504 (2008).
- "Achieving a low interfacial of states
in atomic layer deposited Al2O3 on
In0.53Ga0.47As”, H. C. Chiu, L. T. Tung, Y.
H. Chang, Y. J. Lee, C.C. Chang, J. Kwo*,
and M. Hong*, Appl. Phys. Lett, 93, 202903,
(2008).
- "Approaching Fermi level unpinning in
oxide-In0.2Ga0.8As”, T. H.Chiang, W. C. Lee,
K. H. Shiu, D. Lin, T. D. Lin, J. Kwo, W. E.
Wang , W.Tsai, and M. Hong, IEDM Abstract
Digest , San Francisco, Dec. (2008).
- "Research Advances on III-V MOSFET
Electronics Beyond Si CMOS”,
J. Kwo* and M. Hong*, the 15th International
Molecular beam Epitaxy Conference,
Vancouver, Canada, Aug 4-8, (2008); J.
Crystal Growth, 311, 1944 (2009).
- "Depletion-mode InGaAs MOSFET with MBE
grown Ga2O3(Gd2O3) gate dielectric”, C. A.
Lin, T. D. Lin, C. H. Chiang, M. Hong*, and
J. Kwo*, the 15th International Molecular
beam Epitaxy Conference, Vancouver, Canada,
Aug
4-8, (2008); J. Crystal Growth, 311, 1954
(2009).
- "MBE grown nm-thick single crystal Sc2O3
template on Si for GaN overgrowth”, W. C.
Lee, Y. J. Lee, C. H. Lee, S. Y. Wu, J. Kwo*,
C. H. Hsu,H. M. Ng, and M. Hong*, the 15th
International Molecular beam Epitaxy
Conference, Vancouver, Canada, Aug 4-8,
(2008); J. Crystal Growth, 311,2006, (2009).
- "GaN metal oxide semiconductor diode
with MBE-Al2O3 as a
template followed by ALD growth - Electrical
and interfacial characteristics”, Y. H.
Chang, H. C. Chiu, W. H. Chang, W. C. Lee,
J. Kwo*,and M. Hong*, the 15th International
Molecular beam Epitaxy Conference,Vancouver,
Canada, Aug 4-8, (2008), J. Crystal Growth,
311, 2084, (2009).
- "High k dielectrics HCP Gd2O3
on GaN with an equivalent oxide thickness
approaching 0.5 nm”, W. H. Chang, Y. J. Lee,
C. H. Lee, Y. C.Chang, P. Chang M. L. Huang,
J. Kwo*, J. M. Hong, and M. Hong*, the 15th
International Molecular beam Epitaxy
Conference, Vancouver, Canada, Aug
4-8,(2008); J. Crystal Growth, 311, 2183
(2009).
- "Molecular Beam Epitaxy Grown Al2O3/HfO2
High-κ Dielectrics for Germanium”, W. C.
Lee, B. H. Chin, C. H. Lee, L. K. Chu, Y. J.
Lee, L. T.Tung, T. D. Lin, M. Hong*, and J.
Kwo*, the 15th International Molecular beam
Epitaxy Conference, Vancouver, Canada, Aug
4-8, (2008); J. Crystal Growth. 311, 2187
(2009).
- "Characteristics of
Metal-Oxide-Semiconductor devices with MBE-Grown
Y2O3 on Ge(100)”, L. K. Chu, W. C. Lee, C.
H. Lee, M. Hong* and J.Kwo*, the 15th
International Molecular beam Epitaxy
Conference, Vancouver,Canada, Aug 4-8,
(2008); J. Crystal Growth, 311, 2195 (2009).
- "Inversion Channel Enhancement mode
MOSFETs with Regrown Source
and Drain Contacts”, C. Liao, D. Cheng, C.
Cheng, K. Y. Cheng*, M. Feng, C.
H. Chiang, J. Kwo, and M. Hong*, the 15th
International Molecular beam
Epitaxy Conference, Vancouver, Canada, Aug
4-8, (2008); J. Crystal Growth,
311, 1958.
- "Energy Band Parameters of Atomic Layer
Deposited Al2O3 and
HfO2 on InxGa1-xAs”, M.
L. Huang, Y. C. Chang, Y. H. Chang, T. D.
Lin, J. Kwo*,
and M. Hong*, Appl. Phys. Lett, 94, 052106 , (2009).
- "Domain Matching Epitaxial Growth of
High-quality ZnO film using an Y2O3 buffer
layer on Si (111)”, W.-R. Liu, Y.-H. Li, and
W. F. Hsieh*, C.-H.Hsu*, W. C. Lee, Y. J.
Lee, M. Hong, and J. Kwo, Crystal Growth
Des. 9 (1),239-242 (2009).
- "Utilization of Ga2O3(Gd2O3) Gate
Dielectric for Ge Metal Oxide Semiconductor
Devices without Interfacial and Buffer
layers”, L. K. Chu, T.
D. Lin, C. H. Lee, L. T. Tung, W. C. Lee, R.
L. Chu, C. C. Chang, and M.
Hong*, J. Kwo*, Appl. Phys. Lett, 94,
202108, (2009).
- "Surface Exciton Polariton in HfO2:
Electron Energy-Lossb Spectroscopy Study”,
S.-C. Liou, M.-W. Chu,* Y.-J. Lee, M. Hong,
J. Kwo, and C. H. Chen, New Journal of
Physics 11 103009 (2009).
- "0.5 nm Capacitance Equivalent Thickness
in Single Crystal Hexagonal Gd2O3-doped with
Ga2O3 on GaN”, W. H. Chang, C. H. Lee, Y.
C.Chang, P. Chang, M. L. Huang, Y. J. Lee,
C.-H. Hsu, J. Kwo*, and M. Hong*,Advanced
Materials, 21, 1-5, (2009).
- "Advances on III-V MOSFET for Science
and Technology beyond Si CMOS”, J. Kwo*, T.
D. Lin, M. L. Huang, P. Chang, Y. J. Lee,
and M. Hong*,"ECS Transactions - San
Francisco, CA" Volume 19, "Silicon Nitride,
Silicon Dioxide, and Emerging Dielectrics
10", from the San Francisco, CA meeting.
Conference, May 24-29, (2009).
- "InGaAs MOSCAPs and self-aligned
inversion-channel MOSFETs with
Al2O3/Ga2O3(Gd2O3) as a gate dielectric”, T.
D. Lin, H. C. Chiu, P. Chang,
W. C. Lee, T. H. Chiang, J. Kwo*, W. Tsai,
and M. Hong*, ECS Transactions,
vol. 19, Graphene and Emerging Materials for
Post-CMOS Applications, San
Francisco, CA, May 24-29, (2009).
- "InGaAs Metal-Oxide-Semiconductor
Devices with High k Dielectrics for Science
and Technology beyond Si CMOS”, M. Hong*, J.
Kwo*,T. D. Lin, and M. L. Huang, MRS
Bulletin, 34, 514, (2009).
- "Neutron Scattering Measurements of
Magnetic Excitations in Dy/Y
Superlattices”, A. T. D. Grunwald, E. V.
Tartakovskaya, A. R. Wildes, W.Schmidt, J.
Kwo, C. Majkrzak, R. C. C. Ward, and A.
Schreyer, submitted to
Phys.Rev. B. Rapid Commun, (2009).
- "High quality Ga2O3(Gd2O3) on Ge (100) –
electrical and chemical characterizations”,
R. L. Chu, L. K. Chu, M. L. Huang, L. T.
Tung, T. D.
Lin, C. C. Chang, J. Kwo*, and M. Hong*,
Conf. Proc. Northern American
Molecular beam epitaxy conference, Aug.
10-12, Princeton Univ, NJ, accepted
by J. Vac. Sci. Tech. B, (2009).
- "Monoclinic phase of epitaxial Gd2O3
films grown on GaN”, Y. J.Lee, T. Y. Lai, C.
H. Lee, P. Chang, S. Y. Wu, C.-H. Hsu, J.
Kwo*, and M.Hong*, Conf. Proc. Northern
American Molecular beam epitaxy conference,
Aug.10-12, Princeton Univ, NJ, accepted by
J. Vac. Sci. Tech. B, (2009).
- "RF characteristics of self-aligned
inversion-channel In0.53Ga0.47As MOSFETs
using MBE-Al2O3/Ga2O3(Gd2O3) gate
dielectrics”, T. D.Lin, P. Chang, H. C.
Chiu, J. Kwo*, S. Lin, Shawn S. H. Hsu, and
M. Hong*,Conf. Proc. Northern American
Molecular beam epitaxy conference, Aug.
10-12,Princeton Univ, NJ, submitted to J.
Vac. Sci. Tech. B, (2009).
- "MBE-HfAlO for passivating InGaAs with 1
nm capacitance effective thickness”, P.
Chang, W. C. Lee, M. L. Huang, Y. J. Lee, M.
Hong*,and J. Kwo*, Conf. Proc. Northern
American Molecular beam epitaxy conference,
Aug. 10-12, Princeton Univ, NJ, submitted to
J. Vac. Sci. Tech.B, (2009).
- "Engineering of threshold voltages in
MBE-grown Ga2O3(Gd2O3)/In0.2Ga0.8As”, Y. D.
Wu, Y. C. Chang, T. D. Lin, T. H. Chiang,J.
Kwo*, W. Tsai, and M. Hong*, Conf. Proc.
Northern American Molecular beam
epitaxy conference, Aug. 10-12, Princeton
Univ, NJ, submitted to J. Vac.
Sci. Tech. B, (2009). (2009).
B. Review Articles:
- "Tunneling into the Al5 Compounds”, J. Kwo and T. H. Geballe, Physica 109 & 110B, 1665 (1982).
-
"Synthesis of Rare Earth Films and
Superlattices”, J. Kwo, in Thin Film
Techniques for Low Dimensional Structures",
Edited by R. F. C. Farrow, S. S. P. Parkin,
P. J. Dobson, N. H. Neave and A. S. Arrott,
NATO ASI Series B, Physics 13, p. 337,
Plenum Publisher Corporation (1987).
-
"Properties of In-situ Superconducting YBa2Cu3O7-x
Films By Molecular Beam Epitaxy with an
Activated Oxygen Source”, J. Kwo, M.
Hong, D. J. Trevor, R. M. Fleming, A. E.
White, R. C. Farrow, A. R. Kortan, and K. N.
Short, Science and Technology of Thin Film
Superconductors, Plenum Press, London and
New York, p. 101, (1989).
-
"Tl-Based Superconducting Films By
Sputtering Using a Single Target”, S. H.
Liou, M. Hong, A. R. Kortan, J. Kwo,
D. D. Bacon, C. H. Chen, R. C. Farrow, and
G. S. Grader, Science and Technology of Thin
Film Superconductors, Plenum Press, London
and New York, p. 229, (1989).
- "Magnetic
Rare Earth Superlattices”, C. F.
Majkrzak, J. Kwo, M. Hong, Y. Yafet,
D. Gibbs, C. L. Chien and J. Bohr, Journal
of Advances in Physics, 40, 99-189, (1991).
-
"Growth and Properties of High Tc
Films in YBa2Cu3O7-x
Perovskite by Molecular Beam Epitaxy”, J.
Kwo, in Journal of Crystal Growth, 111,
965, (1991).
-
"Charge Dynamics in Metallic CuO2
Layers”, B. Batlogg, H. Takagi, H. L. Kao,
and J. Kwo, in Electronic
Properties of High Tc Superconductors, The
Normal and Superconducting State, Ed. H.
Kuzmany et al, Springer Series in
Solid-State Sciences, 113, Springer-Verlog,
Berlin, Heidelberg (1993).
-
"Semiconductor-Insulator Interfaces”, M.
Hong, C. T. Liu, H. Reese, and J. Kwo
in "Encyclopedia of Electrical and
Electronics Engineering”, 19, p. 87-100, Ed.
by J. G. Webster, Published by John Wiley &
Sons, New York, (1999).
-
"Materials Characterization of Alternative
Gate Dielectrics”, B. W. Busch, O. Pluchery,
Y. J. Chabal, D.A. Muller, R. L. Opila,
J. Kwo, and E. Garfunkel, Materials
Research Bulletin, March 2002, on
"Alternative Gate Dielectrics for
Microelectronics”, Ed. By G. Wilk, and R.
Wallace.
-
"High κ Gate Dielectrics for Si and Compound
Semiconductors by MBE”, J. Kwo and M.
Hong, Conf. Proc. MRS Fall Meeting, Dec.
2-6, 2002, Boston, MA.
-
"High-quality thin single crystal γ-Al2O3
films grown on Si (111)”, S. Y. Wu, M. Hong,
A. R. Kortan, J. Kwo, "Tailoring
Oxide-Semiconductor Interfaces – an enabling
sub-nano approach for new science and
next-generation high speed and high power
devices” (氧化物-半導體界面控制–次奈米尺寸新興科學解決方案及次世代高速操作高功率元件),
in Taiwan Nanotechnology (台灣奈米科技–從
2004 到嚮往的大未來),
published by Nano-technology center of
Industrial Technology Research Institute,
Hsin Chu, Taiwan, 2004.
-
"原子尺寸下氧化物與半導體界面的剪裁控制:
一個在次奈米尺寸底下新穎科學的發現及對次世代高功能元件製造的解決方案”,洪銘輝和郭瑞年,國立清華大學；
"Tailoring Oxide-Semiconductor Interfaces –
an Enabling Sub-nano Approach for New
Science and Advanced Devices”, M. Hong and
J. Kwo, to appear in the Electronics
Spectrum, the News Lettter of Electron
Devices and Materials Association, Taiwain,
Ed. Y. H. Wang, vol 10, no. 2, Dec.
2004.
-
"Structure, Composition and Order at
Interfaces of Crystalline Oxides and Other
High
k
Materials on Si ”, T. Gustafsson, R.
Garfunkel, L. Goncharova, D. Starodub, R.
Barnes, M. Dalponte, G. Bersuker, B. Fordan,
D. G. Sholom, V. Vaithyanathan, M. Hong, and
J. Kwo, in "Defects in Advanced
High k Dielectric Nano-electronic
Semiconductor Device”, Ed. E. P. Gusev,
Springer, Netherlands, (2005).
-
"High
k
Gate Dielectrics for Compound
Semiconductors, by J. Kwo and M. Hong
, chapter 10th in "Advanced Gate
Stacks on High-Mobility Semiconductors”,
edited by A. Dimoulas, E. P. Gusev, P.
McIntyre, M. Heyns, Springer publishing
company in the Springer Series Materials
Science, (2006).
-
"InGaAs, Ge, and GaN
Metal-Oxide-Semiconductor Devices with High
k
Dielectrics for Science and Technology
beyond Si CMOS”, M. Hong, J. Kwo, T. D. Lin,
M. L. Huang, W. C. Lee, and P. Chang, a book
chapter on "High Mobility Channel
Semiconductor MOSFET”, Springer Publisher,
(2009).
C. Patents(1981-2009):
- J. Kwo, by
G. E. Books (issued 1995) "Methods for Low
temperature Growth of Epitaxial Silicon and
Devices Produced Thereby”.
- Cava, Kwo,
and Thomas, by G. E. Books (issued 1996)
"Methods for Growing transparent Conducting
GaInO3 Films by Sputtering”
- Carter,
Cava, Kwo, Phillips, Thomas, by G. E. Books
(issued on 5/13/1997) "Transparent
Conductors Comprising Zinc-Indium-Oxide and
Methods for Making Films”.
- Hong
10-7-3-3-15-41, by J. A. Garceran (issued on
10/13/1998) "Article Comprising A Gallium
Oxide Layer On A GaAs-Based Semiconductor,
And Method of Making the Article”.
- Cava, Hou,
Kwo, Seelig, Watts, by G. E. Books (issued
on 9/7/1999) "Methods for Making Thin Film
Tantalum Oxide Layers with Enhanced
Dielectric Properties and Capacitors
Employing Such Layers”. .
- Hong-Kwo-Murphy,
by E. E. Pacher (issued on 10/5/1999)
"Article Comprising An Oxide Layer On A GaAs-Based
Semiconductor Body, And Method of Making the
Article”.
- Hong-Kuo-Kwo-Mannaerts-Wang,
by E. E. Packer (issued 1999) "Method of
Making an Article Comprising an Oxide Layer
on A GaAs-Based Semiconductor Body”.
-
Chen-Cho-Hobson-Hong-Kuo-Kwo-Murphy-Ren, by
E. E. Pacher (issued 2000) "Method of Making
An article Comprising an Oxide Layer on a
GaAs-Based Semiconductor”.
- Y. K.
Chen, A. Y. Cho, W. S. Hobson, M. Hong, J.
M. Kuo, J. R. Kwo, D. W. Murphy, and F. Ren,
(issued 8/7/2001), "Method
of Making An Article Comprising An Oxide
Layer On A GaAs-Based Semiconductor Body”,
U.S. Patent Number 6271069.
- Hong-Kortan-Kwo-Mannaerts
by W. Koba (issued 6/11/2001), "Si-Bases
Field Effect Device with High Dielectric
Constant Gate Dielectric”. M. Hong, A. R.
Kortan, J. R. Kwo, and J. P. Mannaerts, "High
dielectric constant gate oxides for
Silicon-based devices”, U.S. Patent
Number 6404027.
- Hong
19-10-16-6 by E E Pacher (issued
10/22/2002), "Article Comprising An Oxide
Layer On A GaAs or GaN-Based Semiconductor
Body”, U.S. Patent Number 6469357.
- M. Hong,
J. M. Kuo, J. Kwo, J. P. Mannaerts,
and Y. C. Wang (issued 12/17/2002), "Method
of making an article comprising an oxide
layer on a GaAs-based semiconductor body”,
U.S. Patent Number 6495407.
- Fleming-Kleiman-Kwo-Osenbach-Thomas
by G. E. Books (issued 11/12/2002),
"Improved Electro-Optic Device Including a
Buffer Layer of Transparent Conducting
Material”, U.S. Patent Number 6480633.
-
洪銘輝、郭瑞年、陳治平、張翔筆、李威縉,
"具有單晶氧化鈧接面膜的磊晶用基板之製作方法”,
(中華民國
issued 7/2005), No 94123194/NP-19030.
-
洪銘輝、郭瑞年等,
"三-五族金屬氧化物半導體元件製程改進”,
中華民國
and US, pending, 2005.
-
郭瑞年、洪銘輝、吳彥達、李威縉、張翔筆、李昆育、李毅君,
"形成金氧半電晶體元件用之基板的製作方法及其製品”,
(中華民國
issued
11/24/2006), No 94141352; US Pending.
- M. Hong,
J. Kwo, C. P. Chen, S. P. Chang, and W. C.
Lee, "Method for forming a semiconductor
device having a structure of a single
crystal scandium oxide film formed on a
silicon substrate”, (US patent issued
6/26/2007), No US7235467 B2.
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