姓名：林登松
服務機關：國立清華大學物理系

研究成果目錄：(一)論文及著述

A.期刊論文  Refereed Papers    

1. PDF Hong-Dao Li, Chan-Yuen Chang, Ling-Ying Chien, Shih-Hsin Chang, T.-C. Chiang, and Deng-Sung Lin, Adsorption and abstraction reactions of HCl on a single Si(100) dangling bond, Phys. Rev. B 83, 075403 (2011)

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2.   PDF Ming-Feng Hsieh (謝明峰), Jen-Yin Cheng (鄭人夤), Jenq-Cheng Yang (楊正成), and Deng-Sung Lin (林登松),Karina Morgenstern, Woei-Wu Pai (白偉武),  Determination of dissociative fragment-adsorbate interaction energy during chemisorption
of the diatomic molecule HCl on Si(100), PHYSICAL REVIEW B 81, 045324 (2010).

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3.  PDF K. Arima, P. Jiang, D.-S. Lin, A. Verdaguer, and M. Salmeron, Ion Segregation and Deliquescence of Alkali Halide Nanocrystals on SiO2, The Journal of Physical Chemistry A 113, 9715 (2009). 

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4.  PDF Ming-Feng Hsieh, Deng-Sung Lin, Heiko Gawronski and Karina Morgenstern, Hard repulsive barrier in hot adatom motion after dissociative adsorption of oxygen on Ag(100),

J. Chem. Phys. 131, 174709 (2009)

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5.  PDF C.-T. Lou, H.-D. Li, J.-Y. Chung,  D.-S. Lin, T.C. Chiang, Oscillations of Bond Character and Polarization at the NaCl/Ge(100) Interface during Cyclic Growth, Phys. Rev. B 80, 195311 (2009)

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6.  PDF Ming-Feng Hsieh, Deng-Sung Lin*, Shiow-Fon Tsay, Possibility of direct exchange diffusion of hydrogen on the Cl/Si(100)-2’1 surface, Phys. Rev. B 80, 045304 (2009). 

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7.  PDF Shiow-Fon Tsay and D.-S. Lin, Atomic and electronic structures of thin NaCl films grown on a Ge(0 0 1) surface, Surface Science 603, 2102–2107 (2009).

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8.  PDF Shyh-Shin Ferng, Shiao-Ting Wu, and Deng-Sung Lin* Mediation of Chain Reactions by Propagating Radicals during Halogenation of H-Masked Si(100): Implications for Atomic-Scale Lithography and Processing,  

J. Chem. Phys. 130, 1 (2009).

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9.   PDF Shiow-Fon Tsay and D.-S. Lin Atomic and Electronic Structures of thin NaCl films grown on Ge(001) surface, Surf. Sci. 603, 2102–2107 (2009) 

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10.  PDF S-F. Tsay, J. Y. Chung, M.-F. Hsieh, S.-S. Ferng C.-T. Lou, D.-S. Lin*, Growth mode and novel structure of ultra-thin KCl layers on the Si(100)-2x1 surface,

Surf. Sci.  603, 419-424, 2009   

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11.  PDF K. -M. Yang, J. Y. Chung, and D.-S. Lin*, In situ Error Estimation for Topographic Height Measured from Frequency-Modulated Atomic Force Microscopy,

Jpn. J. Appl. Phys. 46, 4395 (2007).

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12.    PDF Ming-Feng Hsieh, Jen-Yang Chung, Deng-Sung Lin*, and Shiow-Fon Tsay, Correlation of Reaction Sites during the Chlorine Extraction by Hydrogen atoms from Cl/Si(100)-2x1, J. Chem. Phys. 127, 034708 (2007).

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13.  PDF K.-M. Yang, J. Y. Chung, M. F. Hsieh, S.-S. Ferng, D.-S. Lin*, and T.C. Chiang, Systematic Variations in Apparent Topographic Height as Measured by Non-contact Atomic Force Microscopy, Phys. Rev. B 74, 193313 (2006)

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14.  PDF Shyh-Shin Ferng, Tsung-Hsi Yang, Guangli Luo, Kai-Ming Yang, Ming-Feng Hsieh and Deng-Sung Lin: Growth behaviour of Ge nano-islands on the nanosized Si{111} facets bordering on two {100} planes. Nanotechnology 17, 5207 ( 2006), front cover page featured article.

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  1. PDF D.-S. Lin and T.C. Chiang, Lin and Chiang reply. Phys. Rev. Lett. 96, 209602 ( 2006).
  2. PDF S.-S. Ferng, C.-T. Lin, K.-M. Yang, M.-F. Hsieh, and D.-S. Lin, Evolution of the Two-Dimensional Structure Phase Transitions (3×1)→(2×1) and (1×1)→(2×1) on the Hydrogen Terminated Si(100) Surface, Jpn. J. Appl. Phys. 45, 2197 (2006).
  3. PDF S.-S. Ferng, C.-T. Lin, K.-M. Yang, D.-S. Lin, and T.-C. Chiang, Atomistic View of the Recombinative Desorption of H2 from H/Si(100), Phys. Rev. Lett. 94, 196103 (2005).
  4. PDF Shiang-Yuang Pan, and Deng-Sung Lin, Stability and mechanism of selective etching of ultrathin Ge films on the Si(100) surface upon chlorine adsorption, Phys. Rev. B 90, 045308 (2004).
  5. PDF D.-S. Lin, J. L. Wu, S.-Y. Pan, and T.-C. Chiang, Atomistics of Ge deposition on Si(100) by atomic layer epitaxy, Phys. Rev. Lett. 90, 046102 (2003).
  6. PDF M.-W. Wu, S.-Y. Pan, W.-H. Hung, and D.-S. Lin, Thermal reactions on the Cl-terminated SiGe(100), Surf. Sci. 507, 295 (2002).
  7. PDF   Deng-Sung Lin, Meng-Wen Wu,  and Shiang-Yuan Pan, Chlorine Induced Si Surface Segregation on the Ge-terminated Si/Ge(100) Surface from Core-level Photoemission, Phys. Rev. B.  64, 233302 (2001).
  8. PDF H.-W. Tsai and D.-S. Lin, Comparison of thermal reactions of phosphine on Ge(100) and Si (100) by high-resolution core-level photoemission, Surf. Sci. 482-485, 654-658 (2001).
  9. Y.-C. Pan, S. F. Wang, W.-H. Lee, W.C. Lin, C.-I. Chiang, H. Chang, H.H Hsieh, J.M. Chen, D.-S. Lin, M.-C. Lee, W.-K. Chen, and W.-H. Chen, Structural study of GN:Mg films by x-ray absorption near-edge structure spectroscopy, SOLID STATE COMMUN 117: (10) 577-582 (2001).
  10. Y.-C. Pan, S. F. Wang, W.-H. Lee, M.-C. Lee, W.-K. Chen, W.-H. Chen, L.-Y. Jang, J.F. Lee, C.-I. Chiang, H. Chang, K.-T. Wu, and, D.-S. Lin, Gallium K-edge x-ray absorption study of Mg-doped GaN, APPL PHYS LETT 78: (1) 31-33 JAN 1(2001).
  11. PDF Ru-Ping Chen and Deng-Sung Lin, Distribution of dangling bond pairs on partially hydrogen-terminated Si(100) surface observed by scanning-tunneling-microscopy, Surf. Sci. 454, 196-200 (2000).
  12. PDF Deng-Sung Lin, Tsai-Shain Ku, and Ru-Ping Chen, Interaction of phosphine with Si(100) from core-level photoemission and real-time scanning-tunneling-microscopy, Phys. Rev. B 61, 2799-2805 (2000).
  13. PDF Deng-Sung Lin and Ru-Ping Chen, Hydrogen desorption kinetic measurement on the Si(100)-2x1:H surface by directly counting desorption sites, Phys. Rev. B 60, R8461-8464 (1999).
  14. PDF Deng-Sung Lin, Tsai-Shain Ku, and Tzeng-Jiuh Sheu, Thermal reactions of phosphine with Si(100): A combined photoemission and scanning-tunneling-microscopy study, Surf. Sci., 424, 7 (1999).
  15. Y.-C. Pan, W.-H. Lee, C.-K. Shu, H.-C. Lin, C.-I. Chiang, H. Chang, D.-S. Lin, M.-C. Lee, and W.-K. Chen, Influence of sapphire nitridation on properties of Indium Nitride Prepared by metalorganic vapor phase epitaxy , Jpn. J. Appl. Phys. 38, 4016 (1999).
  16. PDF Perng-Hung Wu and Deng-Sung Lin, Growth mode in Si(100)-(2x1) epitaxy by low-temperature chemical vapor deposition, Phys. Rev. B 15, 57, 12421-12427 (1998).
  17. D.-S. Lin, Scanning tunneling microscopy observation of surface reconstruction of Si(100) during chemical vapor deposition from Si2H6, Surf. Sci., 402, 831-835 (1998).
  18. D.-S. Lin and P.-H. Wu, Real-time scanning tunneling microscopy observation of structural phase transition Si(100)-(2x1)→(2xn)→c(4x4), Surf. Sci. Lett. 397, 273 (1998).
  19. K.-S. Huang, T.-S. Ku, and D.-S. Lin, Growth process of Ge on Si(100)-(2x1) in atomic-layer epitaxy from Ge2H6, Phys. Rev. B 56, 4878 (1997).
  20. D.-S. Lin, T. Miller, and T.-C. Chiang, Atomic-level investigation of the growth of Si/Ge by UHV-CVD, J. Vac. Sci. Technol. A15, 919-926 (1997).
  21. D.-S. Lin, K.-H. Huang, D.-W. Pi, and R.-T. Wu, Coverage-dependent thermal reactions of digermane on Si(100)-(2x1), Phys. Rev. B 54, 16958-16964 (1996).
  22. Hawoong Hong, R. D. Aburano, K.-S. Chung, D.-S. Lin, E. S. Hirschorn, T.-C. Chiang, and Haydn Chen, X-Ray Truncation rod study of Ge(100) surface roughening by molecular beam homoepitaxial growth, J. Appl. Phys. 79, 6858-6864 (1996).
  23. R. D. Aburano, Hawoong Hong, J.M. Roesler, K. Chung, D.-S. Lin, P. Zschack, Haydn Chen, and T.-C. Chiang, X-ray study of the Ag/Si(111) interface, Surf. Sci. Lett. 339, L891-896 (1995).
  24. R. D. Aburano, Hawoong Hong, J.M. Roesler, K. Chung, D.-S. Lin, P. Zschack, Haydn Chen, and T.-C. Chiang, Boundary structure determination of Ag/Si(111) interface by X-ray diffraction, Phys. Rev. B 52, 1839-1847 (1995).
  25. E. S. Hirschorn, D.-S. Lin, E. D. Hanson, and T.-C. Chiang, Atomic burrowing and hole formation for Au growth on Ag(110), Surf. Sci. Lett. 323, L299-305 (1995).
  26. M. Sieger, J. Roesler, D.-S. Lin, T. Miller, and T.-C. Chiang, Holography of Ge(111)-c(2x8) by surface core-level photoemission, Phys. Rev. Lett. 73, 3117-3120 (1994).
  27. D.-S. Lin, Hawoong Hong,T. Miller and T.-C. Chiang, Growth and atomic structure of epitaxial Si films on Ge(111), Surf. Sci. 312, 213-220 (1994).
  28. R. Tsu, H. Z. Xiao, Y. W. Kim, M.-A. Hasan, H. K. Birnbaum, J. E. Greene, D.-S. Lin, and T.-C. Chiang, Surface segregation and growth-mode transitions during the initial stages of Si growth on Ge(100)-(2x1) by cyclic GSMBE from Si2H6, J. Appl. Phys. 75, 240-247 (1994).
  29. D.-S. Lin, E. S. Hirschorn, T. Miller, and T.-C. Chiang, Adsorption, thermal reaction, and desorption of disilane on Ge(111)-c(2x8), Phys. Rev. B 49, 1836-1843 (1994).
  30. D.-S. Lin, T. Miller, T.-C. Chiang, R. Tsu, and J. E. Greene, Thermal reactions of disilane on Si(100) studied by synchrotron-radiation photoemission, Phys. Rev. B48, 11846-11850 (1993).
  31. D.-S. Lin, T. Miller, and T.-C. Chiang, Adsorption and thermal reactions of disilane and the growth of Si films on Ge(100)-(2x1), Phys. Rev. B 47, 6543-6554 (1993).
  32. R. Tsu, D. Lubben, T. R. Bramblett, J. E. Greene, D.-S. Lin and T.-C. Chiang, Adsorption and dissociation of Si2H6 on Ge(100)-(2x1), Surf. Sci. 280, 265-276 (1993).
  33. D.-S. Lin, J. A. Carlisle, T. Miller, and T.-C. Chiang, Lin et al. reply, Phys. Rev. Lett. 69, 552 (1992).
  34. D.-S. Lin, T. Miller, and T.-C. Chiang, Si indiffusion on Ge(100)-(2x1) studied by core-level photoemission, Phys. Rev. B45, 11415-11418 (1992).
  35. D.-S. Lin, E. S. Hirschorn, T.-C. Chiang, R. Tsu, D. Lubben, and J. E. Greene, Scanning-tunneling-microscopy studies of disilane and pyroltyic growth on Si(100)-(2x1), Phys. Rev. B 45, 3494-3498 (1992).
  36. Hawoong Hong, R. D. Aburano, D.-S. Lin, Haydn Chen, and T.-C. Chiang, X-Ray scattering study of Ag/Si(111) buried interface sturctures, Phys. Rev. Lett. 68, 507-510 (1992).
  37. Hawoong Hong, W. E. McMahon, D.-S. Lin, R. D. Aburano, Haydn Chen, T.-C. Chiang, and P. Zschack, C60 encapsulation of the Si(111)-(7x7) surface, Appl. Phys. Lett. 61, 3127-3130 (1992).
  38. D.-S. Lin, T. Miller, and T.-C. Chiang, Bonding of Cs on Si and Ge surfaces studied by core-level spectroscopy, Phys. Rev. B 44, 10719-10723 (1991).
  39. D.-S. Lin T. Miller, and T.-C. Chiang, Dimer charge asymmetry determined by photoemission from epitaxial Ge on Si(100)-(2x1), Phys. Rev. Lett. 67, 2187-2190 (1991).
  40. E. S. Hirschorn, D.-S. Lin, F. M. Leibsle, A. Samsavar, and T.-C. Chiang, Charge transfer and asymmetry on Ge(111)-c(2x8) studied by scanning tunneling microscopy, Phys. Rev. B 44, 1403 (1991).
  41. C. C. Huang, T. Min, D.-S. Lin, B. Zhou, , and J. W. Goodby, Electro-optical and thermal studies of one ferroelectric liquid-crystal compound with a polarization sign reversal , J. Phys. France 51, 1749 (1990).
  42. C. C. Huang, D.-S. Lin, J. W. Goodby, M. A. Waugh, S. M. Stein, and E. Chin, Calorimetric and optical microscopic studies on one ferroelectric liquid-crystal compound with the smectic-A phase, Phys. Rev. A 40, 4153 (1989).

 

　
B.研討會論文

　R. Tsu, D.-S. Lin, J.E. Greene, and T.-C. Chiang, Ge segregation and surface roughening during Si growth on Ge(100)-2x1 by gas-source molecular beam epitaxy from Si2H6, Mat. Res. Soc. Proc. Vol. 280, 281(1993).

　

 

91.10.30 修訂

行 政 院 國 家 科 學 委 員 會 個 人 資 料 表

簽 名 : ________________
填表日期 : 2008 / 08 / 18

一、基本資料

身份證號碼：

******014

中文姓名：

林登松

英文姓名：

DENG-SUNG LIN

國籍：

中華民國

性別：

男

出生日期：

1963.03.25

郵遞區號：

300

聯絡地址：

30013 新竹市光復路二段101號 國立清華大學物理系

聯絡電話：

(公) 03-574 2977 begin_of_the_skype_highlighting            03-574 2977      end_of_the_skype_highlighting　　　　　　　(宅/手機) (03)571-8117 begin_of_the_skype_highlighting            (03)571-8117      end_of_the_skype_highlighting

傳真號碼：

(03) 572 3052 begin_of_the_skype_highlighting            (03) 572 3052      end_of_the_skype_highlighting

E-MAIL：

dslin@phys.nthu.edu.tw

　

二、主要學歷

學校名稱

國別

主修學門系所

學位

起訖年月

伊利諾大學香檳校區

美國

物理系

博士

1989.06 - 1993.10

國立臺灣大學

中華民國

物理系

學士

1981.09 - 1985.06

　

三、現職及專長相關之經歷

服務機關

服務部門/系所

職稱

起訖年月

國立清華大學

物理學系(所)

教授

2008.08

經 歷 :

國立清華大學 物理學系(所)

物理學系(所)

教授

2008.08 - 2008.08

Lawrence Berkeley National Lab

Materials Science Div

訪問科學家

2007.01 - 2007.08

國立交通大學

物理研究所

教授

2000.08 - 2008.07

美國康乃爾大學

物理系

訪問科學家

1999.03 - 1999.08

國立交通大學

物理研究所

副教授

1994.08 - 2000.07

美國伊利諾大學

材料研究實驗室

博士後研究員

1994.02 - 1994.08

　

四、專長

專長名稱

1. 表面物理、化學、與薄膜科學

2. 同步輻射應用科學

3. 物理學

　


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